SWRA495L December 2015 – April 2025 CC1310 , CC1350 , CC2620 , CC2630 , CC2640 , CC2640R2F , CC2640R2F-Q1 , CC2642R-Q1 , CC2650 , CC2662R-Q1
The start-up time of a crystal oscillator is determined by transient conditions at turn-on, small-signal envelope expansion due to negative resistance, and large-signal amplitude limiting. The envelope expansion is a function of the total negative resistance and the motional inductance of the crystal. The time constant of the envelope expansion is proportional to the start-up time of the oscillator given by Equation 8.

A crystal with a low LM gives a shorter start-up time and so does a high-magnitude RN (low CL). A trade-off exists between pull-ability due to low-motional capacitance (CM) and fast start-up time due to low-motional inductance (LM), because the frequency of the crystal is dependent on the both CM and LM. Crystals in smaller package sizes have larger LM, and start more slowly than those in larger package sizes (see Section 1.2.1).
Table 1-1 summarizes crystal parameters and the values for the reference crystals recommended by TI for use with the CC devices.
| Parameters | Description | 24MHz Crystal Used in TI CC26x0 Characterization | TI-Characterization CC23XX 32.768kHz Crystal | TI-Characterization CC27XX-Q1 32.768kHz Crystal | TI-Characterization CC27XX-Q1 48MHz Crystal |
|---|---|---|---|---|---|
| Motional Inductance (LM) | Partly determines crystal response time (how quickly the crystal responds to a change from the oscillator). Lower Lm → crystal responds more quickly to changes from the oscillator. Along with CM, a major determiner of the crystal quality factor | 12.6 mH | 3.69 kH | 2.95 kH | 3.30 mH |
| Motional Capacitance (CM) | Partly determines crystal response time. Lower CM → crystal responds more slowly to changes from the oscillator. | 3.4 fF | 6.4 fF | 8 fF | 3.40fF |
| Motional Resistance (RM) | At resonance, Lm and CM cancel and RM is presented to the oscillator. RM ≃ ESR assuming CL >> CO. | 20Ω (60Ω maximum) | 120 kΩmax | 70 to 75 kΩ | 30Ω |
| Load Capacitance (CL) | The amount of load capacitor to tune the crystal to the correct frequency. This load capacitance also helps determine drive level. | 9pF | 7pF | 7pF | 7pF |
| Shunt Capacitance (C0) | This is a parasitic capacitance due to crystal packaging and helps determine the acceptable drive level. | 1.2pF | 1.3pF | 1.5pF | 0.84 pF |
| ESR | Equivalent Series Resistance. If CL >> CO, then ESR ≃ RM | 20Ω (60Ω maximum) | 120 kΩmax | 70 to 75 kΩ | 30Ω |
| Drive Level | The maximum level of power in the crystal for reliable long-term operation, see Equation 5 | 200 µW | <500 uW | <500 uW | 50 µW Typical to 200 µW max |