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LMG2100R026

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100V 2.6mΩ half-bridge gallium nitride (GaN) power stage

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Data sheet

LMG2100R026

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 100 RDS(on) (mΩ) 2.6 ID (max) (A) 55 Features Built-in bootstrap diode, Half-bridge, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 100 RDS(on) (mΩ) 2.6 ID (max) (A) 55 Features Built-in bootstrap diode, Half-bridge, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VQFN-FCRLF (VBN) 18 31.5 mm² (7 mm × 4.5 mm)
  • Integrated half-bridge GaN FETs and driver
  • 93V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling
  • Integrated half-bridge GaN FETs and driver
  • 93V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling

The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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Top documentation Type Title Format options Date
* Data sheet LMG2100R026 100V, 53A GaN Half-Bridge Power Stage datasheet (Rev. A) PDF | HTML Mar 31, 2025
Application brief Application of GaN FET in Humanoid Robots PDF | HTML Jan 3, 2025

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

BOOSTXL-LMG2100-MD — LMG2100 boost evaluation module

The BOOSTXL-LMG2100-MD evaluation module (EVM) implements a GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives. The EVM offers a TI BoosterPack™ compatible interface to connect to a C2000™ MCU LaunchPad™ development (...)
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The BP-AMC0106-LMG-MD evaluation module (EVM), is an advanced Gallium Nitride (GaN) -based inverter featuring precision shunt-based isolated phase current sensing with AMC0106M05 delta-sigma modulators. This technology enables accurate control of high-precision drives, including servo drives. The (...)
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Evaluation board

LMG2100EVM-097 — LMG2100R026 evaluation module

The LMG2100EVM-097 is a compact, easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter or other converter topology using a half bridge. The evaluation module features a LMG2100R026 half-bridge power module with two 100V 2.6mΩ GaN FETs (...)
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Calculation tool

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Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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Reference design

PMP23591 — 20VIN to 60VIN, 600W, automotive two-phase buck converter with GaN switches reference design

This reference design generates a regulated 12V output from a nominal 48V input. This design can handle up to 50A max current and 25A max current per phase. The LM5137F-Q1 controller provides switching signals to the LMG2100R026 half-bridge Gallium Nitride (GaN) field-effect transistor (FET) with (...)
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Reference design

PMP31306 — GaN-based dual-phase boost converter reference design for Class H audio applications

This design is a dual-phase automotive boost converter for Class-H audio applications using LMG2100R026 gallium nitride (GaN) half bridges and offering analog- or digital-output voltage tracking. The output power is 1000W at 11V input voltage (1250W peak at 12V). The converter area measures 47mm × (...)
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TIDA-010954 — 600W GaN-based single-phase cycloconverter reference design

This reference design implements a 600W bidirectional single-stage DC-AC inverter based on cycloconverter (AC-DAB) topology and TI GaN power stages. The design supports up to 60V and ±16A on the DC side and on the single-phase, 230VAC and 2.6A. The inverter supports bidirectional power flow and (...)
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Package Pins CAD symbols, footprints & 3D models
VQFN-FCRLF (VBN) 18 Ultra Librarian
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