SN65C1168E-SEP

• VID V62/19606
• Radiation hardened
  • Single event latch-up (SEL) immune to 43 MeV-cm²/mg at 125°C
  • ELDRS-free to 30 krad(Si)
  • Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si)
• Space Enhanced Plastic
  • Controlled baseline
  • Gold wire
  • NiPdAu lead finish
  • One assembly and test site
  • One fabrication site
  • Available in military (–55°C to 125°C) temperature range
  • Extended product life cycle
  • Extended product-change notification
  • Product traceability
  • Enhanced mold compound for low outgassing
• Meet or exceed standards TIA/EIA-422-B and ITU recommendation V.11
• Operate from single 5-V power supply
• ESD protection for RS-422 bus pins
  • ±12-kV human-body model (HBM)
  • ±8-kV IEC 61000-4-2, contact discharge
  • ±8-kV IEC 61000-4-2, air-gap discharge
• Low-pulse skew
• Receiver input impedance . . . 17 kΩ (typical)
• Receiver input sensitivity . . . ±200 mV
• Receiver common-mode input voltage range of
  –7 V to 7 V
• Glitch-free power-up/power-down protection

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The SN65C1168E-SEP consists of dual drivers and dual receivers with ±12-kV ESD (HBM) and ±8-kV ESD (IEC61000-4-2 Air-Gap Discharge and Contact Discharge) for RS-422 bus pins. The device meets the requirements of TIA/EIA-422-B and ITU recommendation V.11. Some parameters do not meet all TIA/EIA-422-B and ITU recommendation V.11 requirements after 20-krad(Si) TID exposure.

The SN65C1168E-SEP drivers have individual active-high enables.