SN74CB3Q3306A-EP

ACTIVE

DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

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DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

SN74CB3Q3306A-EP

ACTIVE

Product details

Parameters

Configuration 1:1 SPST Number of channels (#) 2 Power supply voltage - single (V) 2.5, 3.3 Ron (Typ) (Ohms) 5 Bandwidth (MHz) 500 Operating temperature range (C) -55 to 125 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (Max) (mA) 64 Rating HiRel Enhanced Product CON (Typ) (pF) 8 Supply current (Typ) (uA) 250 open-in-new Find other Analog switches & muxes

Package | Pins | Size

TSSOP (PW) 8 19 mm² 3 x 6.4 open-in-new Find other Analog switches & muxes

Features

  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE  = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface,
    Differential Signal Interface, Bus Isolation, Low-Distortion
    Signal Gating

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C)
    Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

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Description

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 16
Type Title Date
* Datasheet DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH datasheet Dec. 17, 2013
* Radiation & Reliability reports CCB3Q3306AMPWREP Reliability Report Dec. 16, 2014
Application notes CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. A) Jun. 30, 2020
Application notes Selecting the Right Texas Instruments Signal Switch (Rev. B) Apr. 02, 2020
Application notes Multiplexers and Signal Switches Glossary Mar. 06, 2020
Technical articles Roll with the design punches and overcome power-sequencing challenges Jul. 29, 2019
Selection guides Logic Guide (Rev. AB) Jun. 12, 2017
VID SN74CB3Q3306A-EP VID V6214606 Jun. 21, 2016
Application notes Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) Dec. 02, 2015
User guides LOGIC Pocket Data Book (Rev. B) Jan. 16, 2007
More literature Digital Bus Switch Selection Guide (Rev. A) Nov. 10, 2004
Application notes Semiconductor Packing Material Electrostatic Discharge (ESD) Protection Jul. 08, 2004
User guides Signal Switch Data Book (Rev. A) Nov. 14, 2003
More literature Logic Cross-Reference (Rev. A) Oct. 07, 2003
Application notes Bus FET Switch Solutions for Live Insertion Applications Feb. 07, 2003
Application notes CBT-C, CB3T, and CB3Q Signal-Switch Families Feb. 04, 2003

Design & development

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Hardware development

EVALUATION BOARDS Download
document-generic User guide
Description

Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.

The (...)

Features
  • Simplifies prototyping of SMT IC’s
  • Supports 6 common package types
  • Low Cost

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