±10-A 5.7-kV RMS single channel isolated gate driver with two-level turn off
Product details
Parameters
Package | Pins | Size
Features
- 5.7-kVRMS single channel isolated gate driver
- SiC MOSFETs and IGBTs up to 2121Vpk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 270-ns response time fast overcurrent protection
- Internal 2-level turn-off when fault happens
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Reject <40-ns noise transient and pulse on input pins
- 12-V VDD UVLO with power good on RDY
- VDD UVLO 12 V
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8 mm
- Operating junction temperature –40°C to 150°C
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Description
The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).
The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size and cost.
Same functionality but is not pin-for-pin or parametrically equivalent to the compared device:
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver datasheet (Rev. A) | Sep. 21, 2020 |
Application note | Performance of the Analog PWM Channel in Smart Gate Drivers | Jan. 16, 2020 | |
User guide | UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) | Sep. 09, 2019 | |
Application note | Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation | Jan. 30, 2019 | |
Technical article | How to achieve higher system robustness in DC drives, part 3: minimum input pulse | Sep. 19, 2018 | |
Technical article | How to achieve higher system robustness in DC drives, part 2: interlock and deadtime | May 30, 2018 | |
Technical article | Boosting efficiency for your solar inverter designs | May 24, 2018 | |
Technical article | How to achieve higher system robustness in DC drives, part 1: negative voltage | Apr. 17, 2018 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
Features
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with two-level soft turn OFF and Miller clamp drive signal for external FET
- Robust noise-immune solution with CMTI > 100 V/ns
Design tools & simulation
Features
- Leverages Cadence PSpice Technology
- Preinstalled library with a suite of digital models to enable worst-case timing analysis
- Dynamic updates ensure you have access to most current device models
- Optimized for simulation speed without loss of accuracy
- Supports simultaneous analysis of multiple products
- (...)
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
SOIC (DW) | 16 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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