UCC21750 Single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI | TI.com

UCC21750
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This product is prototype/experimental and has not been released to the market. Testing and final processes may not be complete. This product may be subject to further changes or possible discontinuation.
Single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI

Single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI - UCC21750
Datasheet
UCC21750 Single Channel Isolated Gate Driver for SiC/IGBT with Advanced Protection and High-CMTI datasheet (Rev. A)
 

Sample availability and more information

Preproduction samples are available (PUCC21750DW). Request now

Full data sheet, EVM user's guide, and PSpice model are available. Request now

Description

The UCC21750 is a galvanic isolated single channel gate drivers designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, >150V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

Features

  • Single channel SiC/IGBT isolated gate driver
  • SiC MOSFETs and IGBTs up to 1700 V
  • 33-V maximum output drive voltage (VDD-COM)
  • Split outputs with ±10-A peak drive current
  • 150-V/ns min. CMTI
  • DESAT – monitor VCE, VDS while PWM is ON
    • Response time: 200ns
  • Active miller clamp
    • 4-A internal active miller clamp
  • Soft turn-off when fault happen
    • Soft turn-off 400 mA
  • Isolated analog sensor with PWM output for
    • Temperature sense with NTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject noise transient and pulse on input pins
  • UVLO with power good on RDY
    • VDD UVLO 12 V
  • Inputs/outputs with over/under-shoot immunity
  • Small propagation delay and pulse/part skew
  • Operating temperature range –40°C to 125°C
  • Safety-related certifications (planned):
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01
    • 5700-VRMS Isolation for 1 Minute per UL1577

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Parametrics

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Part number Order Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Input VCC (Min) (V) Input VCC (Max) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC21750 Order now 5700     8400     2121     1     IGBT
SiCFET    		   33     13     3     5.5     10     90     -40 to 125     SOIC | 16    
ISO5451 Order now 5700     8000     1420     1     IGBT         30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5452 Order now 5700     8000     1420     1     IGBT
SiCFET    		     30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16    
ISO5851 Order now 5700     8000     2121     1     IGBT         30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5852S Order now 5700     8000     2121     1     IGBT
SiCFET    		     30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16