ISO6521-Q1

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.