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ISOS510-SEP

Name: ISOS510-SEP
Brand: TI
SKU: ISOS510-SEP
Price: 347 USD

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Optoemulator mit strahlungstolerantem Transistorausgang, analogem Verhalten aus weltraumtauglichem K

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Datenblatt

document-pdfAcrobat ISOS510-SEP Radiation Tolerant , Current-Driven Analog Isolator With Transistor Output datasheet (Englisch) PDF | HTML

ISOS510-SEP

VORSCHAU

Datenblatt

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Produktdetails

Rating

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Product type

Analog transistor output

Input type

DC

Output type

Analog transistor

Withstand isolation voltage (VISO) (Vrms)

3750

Number of channels

1

Current transfer ratio (CTR) (min) (%)

100

Current transfer ratio (CTR) (max) (%)

155

Forward voltage (typ) (V)

1.2

Forward current (IF) (max) (mA)

30

Operating temperature range (°C)

-55 to 125

Turnon time (enable) (µs)

3.5, 5.7

Turnoff time (disable) (µs)

3.6, 8, 10

Creepage (min) (mm)

5

Clearance (min) (mm)

5

Rating

Space

Product type

Analog transistor output

Input type

DC

Output type

Analog transistor

Withstand isolation voltage (VISO) (Vrms)

3750

Number of channels

1

Current transfer ratio (CTR) (min) (%)

100

Current transfer ratio (CTR) (max) (%)

155

Forward voltage (typ) (V)

1.2

Forward current (IF) (max) (mA)

30

Operating temperature range (°C)

-55 to 125

Turnon time (enable) (µs)

3.5, 5.7

Turnoff time (disable) (µs)

3.6, 8, 10

Creepage (min) (mm)

5

Clearance (min) (mm)

5

SOIC (DFG)

4

24.57 mm² 3.51 x 7

Radiation Performance
- Total Ionizing Dose (TID) Characterized (ELDRS-Free) up to 50krad(Si)
- TID RLAT up to 30krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 43MeV-cm2/mg at 125℃
- Single-event functional interrupt (SEFI) and single-event transient (SET) characterized LET up to 43MeV-cm2/mg
Space Enhanced Plastic (Space EP)
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
1-channel diode input
Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 100% to 155%
High collector-emitter voltage: VCE (max) = 30V
Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
Small 4-pin package (DFG)
Safety-related certifications:
- UL 1577 recognition
- DIN EN IEC 60747-17 (VDE 0884-17) conformity per VDE

Radiation Performance
- Total Ionizing Dose (TID) Characterized (ELDRS-Free) up to 50krad(Si)
- TID RLAT up to 30krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 43MeV-cm2/mg at 125℃
- Single-event functional interrupt (SEFI) and single-event transient (SET) characterized LET up to 43MeV-cm2/mg
Space Enhanced Plastic (Space EP)
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
1-channel diode input
Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 100% to 155%
High collector-emitter voltage: VCE (max) = 30V
Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
Small 4-pin package (DFG)
Safety-related certifications:
- UL 1577 recognition
- DIN EN IEC 60747-17 (VDE 0884-17) conformity per VDE

The ISOS510 radiation-tolerant device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510 is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510 enables these devices to be used in aerospace & defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.

The ISOS510 radiation-tolerant device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510 is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510 enables these devices to be used in aerospace & defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.

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*	Data sheet	ISOS510-SEP Radiation Tolerant , Current-Driven Analog Isolator With Transistor Output datasheet	PDF \| HTML	01 Aug 2025

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ISOS510-SEP

Optoemulator mit strahlungstolerantem Transistorausgang, analogem Verhalten aus weltraumtauglichem K

ISOS510-SEP

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