Gehäuseinformationen
| Gehäuse | Pins X1SON (DPY) | 2 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 10.000 | LARGE T&R |
Merkmale von TPD1E01B04
- IEC 61000-4-2 Level 4 ESD Protection
- ±15-kV Contact Discharge
- ±17-kV Air Gap Discharge
- IEC 61000-4-4 EFT Protection
- 80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection
- 2.5 A (8/20 µs)
- IO Capacitance:
- 0.18 to 0.20 pF (Typical)
- 0.20 to 0.23 pF (Maximum)
- DC Breakdown Voltage: 6.4 V (Typical)
- Ultra Low Leakage Current: 10-nA (Maximum)
- Low ESD Clamping Voltage: 15 V at 16 A TLP
- Low Insertion Loss: 26.9 GHz (–3 dB Bandwidth, DPL)
- Supports High Speed Interfaces up to 20 Gbps
- Industrial Temperature Range: –40°C to +125°C
- Industry Standard 0201 and 0402 footprints
Beschreibung von TPD1E01B04
The TPD1E01B04 is a bidirectional TVS ESD protection diode array for USB Type-C and Thunderbolt 3 circuit protection. The TPD1E01B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
This device features a 0.18 to 0.20-pF (typical) IO capacitance making it ideal for protecting high-speed interfaces up to 20 Gbps such as USB 3.1 Gen2 and Thunderbolt 3. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.
The TPD1E01B04 is offered in the industry standard 0201 (DPL) package and 0402 (DPY) packages.