Gehäuseinformationen
| Gehäuse | Pins X1SON (DPY) | 2 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 10.000 | LARGE T&R |
Merkmale von TPD1E10B09-Q1
- AEC-Q101 qualified
- IEC 61000-4-2 level 4 ESD protection
- ±20-kV Contact Discharge
- ±20-kV Air-Gap Discharge
- ISO 10605 (330 pF, 330 Ω) ESD protection
- ±8-kV Contact Discharge
- ±15-kV Air-Gap Discharge
- IEC 61000-4-5 surge protection
- 4.5 A (8/20 µs)
- I/O capacitance 10 pF (typical)
- R DYN: 0.5 Ω (typical)
- DC breakdown voltage ±9.5 V (minimum)
- Ultra low leakage current 100 nA (maximum)
- 13-V clamping voltage (typical at I PP = 1 A)
- Industrial temperature range: –40°C to +125°C
- Space-saving 0402 footprint
Beschreibung von TPD1E10B09-Q1
The TPD1E10B09-Q1 device is a bidirectional electrostatic discharge (ESD) transient voltage suppression (TVS) diode in a small 0402 industry standard package. This TVS protection diode is convenient for component placement in space-saving applications and features low R DYN and high IEC rating. The TPD1E10B09-Q1 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4) offering ±20-kV contact discharge and ±20-kV IEC air-gap protection. ESD voltages can easily reach 5-kV and during extreme conditions these voltages can be significantly higher, causing damages to many integrated circuits. For example, in a low humidity environment voltages can exceed 20-kV.
The low dynamic resistance (0.5 Ω) and low clamping voltage (13 V at 1-A IPP) allows for system level protection against transient events, providing robust protection on designs that are exposed to ESD events. This device also features a 10-pF IO capacitance making it an excellent choice for audio lines, push buttons, memory interfaces, or GPIOs.
This device is also available without automotive qualification: TPD1E10B09.