Gehäuseinformationen
| Gehäuse | Pins WSON (DQD) | 8 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TPD3F303
- Bidirectional EMI Filtering and Line Termination
With Integrated ESD Protection- –3-dB Bandwidth 300 MHz
- IEC 61000-4-2 Level 4 ESD Protection
- ±15-kV Contact Discharge
- ±15-kV Air Gap Discharge
- DC Breakdown Voltage: 6 V (Minimum)
- Low Leakage Current: 0.1 µA (Maximum)
- Low Noise C-R-C Filter Topology
- Integrated VCC Clamp Eliminates the Need for
External ESD Protection - Space-Saving DPV (0.5-mm Pitch), DQD
Packages (0.4-mm Pitch)
Beschreibung von TPD3F303
The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.