Gehäuseinformationen
| Gehäuse | Pins USON (DQA) | 10 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TPD4E02B04-Q1
- AEC-Q101 Qualified
- IEC 61000-4-2 Level 4
ESD Protection
- ±12-kV Contact Discharge
- ±15-kV Air Gap Discharge
- ISO 10605 (330 pF, 330 Ω) ESD Protection
- ±10 kV Contact Discharge
- ±10-kV Air Gap Discharge
- IEC 61000-4-4 EFT
Protection
- 80 A (5/50 ns)
- IEC 61000-4-5 Surge Protection
- 2 A (8/20 µs)
- IO Capacitance:
- 0.25 pF (Typical)
- DC Breakdown Voltage: 5.5 V (Minimum)
- Ultra Low Leakage Current: 10 nA (Maximum)
- Low ESD Clamping Voltage: 8.8 V at 5-A TLP
- Supports High Speed Interfaces up to 10 Gbps
- Industrial Temperature Range: –40°C to +125°C
- Easy Flow-Through Routing Package
Beschreibung von TPD4E02B04-Q1
The TPD4E02B04-Q1 is an automotive-qualified bidirectional TVS ESD protection diode array for USB Type-C and HDMI 2.0 circuit protection. The TPD4E02B04-Q1 is rated to dissipate ESD strikes up to 10 kV per ISO 10605 (330 pF, 330 Ω) ESD standard. The TPD4E02B04 is also rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
This device features a 0.25-pF IO capacitance per channel making it ideal for protecting high-speed interfaces up to 10 Gbps such as USB 3.1 Gen2. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.
The TPD4E02B04-Q1 is offered in the industry standard USON-10 (DQA) package. The package features flow-through routing and 0.5-mm pin pitch easing implementation and reducing design time.
This device is also available without automotive qualification: TPD4E02B04.