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TPS7H5020-SP

ACTIVO

Radiation-hardened, QML-P, 100% duty cycle PWM controller for driving MOSFETs or GaN FETs

Detalles del producto

Topology Boost, Flyback Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Topology Boost, Flyback Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² (7.8 mm × 6.4 mm)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. E) PDF | HTML 15/04/2026
* Informe de radiación y confiabilidad TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report 3/09/2025
* Informe de radiación y confiabilidad TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 2/09/2025
* Informe de radiación y confiabilidad Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP PDF | HTML 18/08/2025
* SMD TPS7H5020-SP SMD TPS7H5020-SP SMD 5962-24201 7/07/2026
Informe IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP) PDF | HTML 28/07/2026
Nota sobre la aplicación Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products PDF | HTML 8/06/2026
Guía de selección TI Space Products (Rev. L) 27/03/2026
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 17/06/2025
Nota sobre la aplicación Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 10/06/2025
Nota sobre la aplicación QML flow, its importance, and obtaining lot information (Rev. C) 30/08/2023
Nota sobre la aplicación Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19/10/2022
Nota sobre la aplicación DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 21/08/2020
Libro electrónico Radiation Handbook for Electronics (Rev. A) 21/05/2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

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El TPS7H5020EVM demuestra el funcionamiento de un único controlador PWM en modo de corriente TPS7H5020-SP con controlador de compuerta integrado con un FET de GaN en una configuración boost. La placa proporciona huellas que se pueden rellenar con componentes adicionales y puntos de prueba para (...)
Guía del usuario: PDF | HTML
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Placa de evaluación

TPS7H5020FLYEVM — TPS7H5020-SEP y módulo de evaluación de retorno QMLP

El TPS7H5020FLYEVM demuestra el funcionamiento de un controlador PWM TPS7H5020-SEP que acciona un elemento de conmutación de FET de GaN en una topología de convertidor de retorno. El EVM proporciona flexibilidad para permitir la prueba de configuraciones personalizadas. Se proporcionan puntos de (...)

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Modelo de simulación

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - Modelo PSpice
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Modelo de simulación

TPS7H502X SIMPLIS Model

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Diseño de referencia

PMP23598 — Diseño de referencia de convertidor de avance sincrónico de 75 W para aplicaciones espaciales

Este diseño de referencia utiliza un controlador de modulación de ancho de pulso (PWM) de TPS7H5020-SEP tolerante a la radiación y un controlador de puerta de medio puente de GaN de 200 V TPS7H6005-SEP tolerante a la radiación para crear una topología de avance sincrónica de alta eficiencia. Para (...)

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