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TPS7H5020-SP

ACTIVO

Cont. PWM resistente a radiación, con ciclo de trabajo QMLP 100 %, para MOSFET o FET de GaN

Detalles del producto

Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

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Documentación técnica

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* Data sheet TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet (Rev. A) PDF | HTML 15 sep 2025
* Radiation & reliability report TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report 03 sep 2025
* Radiation & reliability report TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 02 sep 2025
* Radiation & reliability report Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP PDF | HTML 18 ago 2025
Selection guide TI Space Products (Rev. K) 04 abr 2025

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPS7H5020EVM — Módulo de evaluación TPS7H5020-SP

El TPS7H5020EVM demuestra el funcionamiento de un único controlador PWM en modo de corriente TPS7H5020-SP con controlador de compuerta integrado con un FET de GaN en una configuración boost. La placa proporciona huellas que se pueden rellenar con componentes adicionales y puntos de prueba para (...)
Guía del usuario: PDF | HTML
Placa de evaluación

TPS7H5020FLYEVM — TPS7H5020-SEP y módulo de evaluación de retorno QMLP

El TPS7H5020FLYEVM demuestra el funcionamiento de un controlador PWM TPS7H5020-SEP que acciona un elemento de conmutación de FET de GaN en una topología de convertidor de retorno. El EVM proporciona flexibilidad para permitir la prueba de configuraciones personalizadas. Se proporcionan puntos de (...)

Guía del usuario: PDF | HTML
Modelo de simulación

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
Modelo de simulación

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
Diseños de referencia

PMP23598 — Diseño de referencia de convertidor de avance sincrónico de 75 W para aplicaciones espaciales

Este diseño de referencia utiliza un controlador de modulación de ancho de pulso (PWM) de TPS7H5020-SEP tolerante a la radiación y un controlador de puerta de medio puente de GaN de 200 V TPS7H6005-SEP tolerante a la radiación para crear una topología de avance sincrónica de alta eficiencia. Para (...)
Test report: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
HTSSOP (PWP) 24 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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