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TPS7H6101-SEP

ACTIVO

Radiation-tolerant, 200V 10A GaN power stage with integrated driver

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Hoja de datos

document-pdfAcrobat TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A) (Inglés) PDF | HTML

TPS7H6101-SEP

ACTIVO

Hoja de datos

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Detalles del producto

VDS (max) (V)

200

RDS(on) (mΩ)

15

Features

Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection

Rating

Catalog, Space

Operating temperature range (°C)

-55 to 125

VDS (max) (V)

200

RDS(on) (mΩ)

15

Features

Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection

Rating

Catalog, Space

Operating temperature range (°C)

-55 to 125

UNKNOWN (NPR)

64

See data sheet

LGA (NPR)

64

11664 mm² (108 mm × 108 mm)

Radiation performance:
- Total ionizing dose (TID) characterized(1)
  - Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
- Single-event effects (SEE) characterized(2)
  - Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
  - Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
200V ehancement mode (e-mode) GaN FET half bridge
- 15mΩRDS(ON) (typical)
- Up to 2MHz operation
LGA package:
- Thermally optimized 12mm × 9mm LGA package with thermal pads
- Integrated gate drive resistors
- Low common source inductance packaging
- Electrically isolated high-side and low-side
Flexible control for various half-bridge and two switch power supply topologies
- Low propagation delay
- Two operational modes
  - Single PWM input with adjustable dead time
  - Two independent inputs
- Programmable dead time control
- Selectable input interlock protection in independent input mode
- 5V gate drive supply for robust FET operation

Radiation performance:
- Total ionizing dose (TID) characterized(1)
  - Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
- Single-event effects (SEE) characterized(2)
  - Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
  - Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
200V ehancement mode (e-mode) GaN FET half bridge
- 15mΩRDS(ON) (typical)
- Up to 2MHz operation
LGA package:
- Thermally optimized 12mm × 9mm LGA package with thermal pads
- Integrated gate drive resistors
- Low common source inductance packaging
- Electrically isolated high-side and low-side
Flexible control for various half-bridge and two switch power supply topologies
- Low propagation delay
- Two operational modes
  - Single PWM input with adjustable dead time
  - Two independent inputs
- Programmable dead time control
- Selectable input interlock protection in independent input mode
- 5V gate drive supply for robust FET operation

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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Documentación técnica

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Documentación principal	Tipo	Título	Opciones de formato	Fecha
*	Hoja de datos	TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A)	PDF \| HTML	26/03/2026
*	Informe de radiación y confiabilidad	Single-Event Effects (SEE) Radiation Report of the TPS7H6101-SEP	PDF \| HTML	2/04/2026
*	Informe de radiación y confiabilidad	TPS7H6101-SEP Production Flow and Reliability Report (Rev. A)	PDF \| HTML	27/03/2026
*	Informe de radiación y confiabilidad	TPS7H6101 Neutron Displacement Damage (NDD) Characterization Report		20/02/2026
*	Informe de radiación y confiabilidad	TPS7H6101-SEP Total Ionizing Dose (TID) Radiation Report (Rev. A)		28/01/2026
	Informe	IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP)	PDF \| HTML	28/07/2026
	Nota sobre la aplicación	Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products	PDF \| HTML	8/06/2026
	Guía de selección	TI Space Products (Rev. L)		27/03/2026
	Certificado	TPS7H6101EVM EU Declaration of Conformity (DoC)	PDF \| HTML	16/04/2025
	Nota sobre la aplicación	Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A)	PDF \| HTML	15/09/2022
	Libro electrónico	Radiation Handbook for Electronics (Rev. A)		21/05/2019

Diseño y desarrollo

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Placa de evaluación

TPS7H6101EVM — Módulo de evaluación TPS7H6101-SEP

El TPS7H6101EVM utiliza un carril de tensión de entrada en el J13 para alimentar el PVIN de 100 V. De forma predeterminada, el dispositivo ejecuta el modo PWM y el modo IIM se puede usar con cambios mínimos. Al ingresar una forma de onda de 0 V a 5 V en el J8, el TPS7H6101-SP funcionará como (...)

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