TXS02326A

ACTIVO

Multiplexor/conversor de alimentación doble 2:1, tarjeta SIM con detección automática y LDO de ranur

Detalles del producto

Bits (#) 6 Data rate (max) (Mbps) 120 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 0.74 Vout (max) (V) 3.6 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 6 Data rate (max) (Mbps) 120 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 0.74 Vout (max) (V) 3.6 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
VQFN (RGE) 24 16 mm² 4 x 4
  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

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Documentación técnica

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Ver todo 4
Tipo Título Fecha
* Data sheet Dual-Supply 2:1 SIM Card Multiplexer/Translator With Automatic Detection datasheet (Rev. A) 02 ago 2013
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 jul 2024
Selection guide Voltage Translation Buying Guide (Rev. A) 15 abr 2021

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

TXS02326A IBIS Model

SCEM552.ZIP (144 KB) - IBIS Model
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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