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UCC21320-Q1

ACTIVO

Controlador de puerta aislada de doble canal (4 A/6 A) y 3.75 kVrms con tiempo muerto programable en

Detalles del producto

Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 5303, 6250 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 19 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 5303, 6250 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 19 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • 4-A peak source, 6-A peak sink output
  • 3-V to 18-V input VCCI range to interface with both digital and analog controllers
  • Up to 25-V VDD output drive supply
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100 V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide Body SOIC-14 (DWK) Package
    • 3.3mm spacing between driver channels
  • Operating temperature range –40 to +125°C
  • Surge immunity up to 12.8 kV
  • Isolation barrier life >40 years
  • TTL and CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 5 ns
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • 4-A peak source, 6-A peak sink output
  • 3-V to 18-V input VCCI range to interface with both digital and analog controllers
  • Up to 25-V VDD output drive supply
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100 V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide Body SOIC-14 (DWK) Package
    • 3.3mm spacing between driver channels
  • Operating temperature range –40 to +125°C
  • Surge immunity up to 12.8 kV
  • Isolation barrier life >40 years
  • TTL and CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 5 ns
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6

The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

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Documentación técnica

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Tipo Título Fecha
* Data sheet UCC21320-Q1 4-A, 6-A, 3.75-kVRMS Isolated Dual-Channel Gate Driver for Automotive datasheet PDF | HTML 28 ago 2019
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021
EVM User's guide Using the UCC21520EVM-286, UCC21521CEVM-286, and UCC21530EVM286 User's Guide (Rev. C) PDF | HTML 21 oct 2021

Diseño y desarrollo

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SOIC (DWK) 14 Ver opciones

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