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Drivers de compuerta aislados

UCC5870-Q1

ACTIVO

Controlador de puerta aislada monocanal de 30 A y 3.75 kVrms con seguridad funcional para IGBT/SiC p

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UCC5870-Q1

ACTIVO
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Detalles del producto

Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
SSOP (DWJ) 36 131.84 mm² 12.8 x 10.3
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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El manual de seguridad funcional del UCC5870-Q1, el informe de análisis y los informes de seguridad funcional de FIT Rate, FMD y Pin FMA se encuentran disponibles. Solicítelos ahora.

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Documentación técnica

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* Data sheet UCC5870-Q1 Isolated IGBT, SiC MOSFET Gate Driver With Real-Time datasheet (Rev. C) 01 sep 2021
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 sep 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 feb 2023
Technical article Improving safety in EV traction inverter systems PDF | HTML 08 dic 2022
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 21 oct 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 sep 2022
Technical article Understanding functional safety for gate drivers and traction inverter systems PDF | HTML 10 ago 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 10 jun 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021
Certificate UL 1577 Certificate of Compliance 22 oct 2021
Technical article Driving next-generation EV systems with a distributed architecture PDF | HTML 27 sep 2021
White paper A High-Performance, Integrated Powertrain Solution: The Key to EV Adoption (Rev. A) 15 abr 2021
More literature Protecting Power Devices in Electric Vehicle Applications 23 mar 2021
Certificate UCC5870QEVM-045 EU Declaration of Conformity (DoC) 22 feb 2021
EVM User's guide UCC5870-Q1EVM-045 User's Guide PDF | HTML 04 feb 2020
EVM User's guide UCC5870-Q1 Evaluation Module User's Guide 01 oct 2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC5870QEVM-045 — EVM UCC5870-Q1 trifásico de controlador de puerta MOSFET IGBT/SiC aislada de 15 A conforme a la segu

El módulo de evaluación (EVM) trifásico UCC5870-Q1 está diseñado para la evaluación del controlador de puerta monocanal aislado de 15 A de TI con funciones de protección avanzadas. Este EVM está diseñado para controlar MOSFET e IGBT de SiC de alta potencia en aplicaciones EV/HEV. Este EVM trifásico (...)

Guía del usuario: PDF | HTML
No disponible en TI.com
GUI para el módulo de evaluación (EVM)

UCC5870QDWJEVM-026-GUI — UCC5870-Q1 EVM GUI Software

UCC5870-Q1 EVM GUI Software
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Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers de compuerta aislados
UCC5870-Q1 — Controlador de puerta aislada monocanal de 30 A y 3.75 kVrms con seguridad funcional para IGBT/SiC p UCC5871-Q1 — Controlador de compuerta IGBT/SiC MOSFET aislado de 30 A y 5.7 kV VRMS para automoción con funciones
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Modelo de simulación

UCC5870-Q1 SIMPLIS Model (Rev. A)

SLUM763A.ZIP (250 KB) - SIMPLIS Model
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Herramienta de cálculo

SLURAZ3 — UCC5870-Q1 XL Calculator Tool

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Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers de compuerta aislados
UCC5870-Q1 — Controlador de puerta aislada monocanal de 30 A y 3.75 kVrms con seguridad funcional para IGBT/SiC p
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

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Design guide: PDF
Esquema: PDF
Diseños de referencia

PMP22817 — Controlador de compuerta y fuente de alimentación de polarización programables por SPI para automoci

Este diseño de referencia proporciona alimentación de polarización aislada y controlador de puerta aislada para interruptores de alimentación en inversores de tracción y cargadores de a bordo. Tanto la potencia de polarización como el controlador proporcionan el alto aislamiento (RMS de 3 kV (...)
Test report: PDF
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
  • Lugar de ensamblaje

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