SN74CB3Q16244

アクティブ

4 個の制御入力採用、10pF オン状態静電容量、5V、1:1 (SPST)、16 チャネル、FET バス スイッチ

製品詳細

Protocols Analog Configuration 1:1 SPST Number of channels 16 Bandwidth (MHz) 500 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 10 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 10000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 16 Bandwidth (MHz) 500 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 4 CON (typ) (pF) 10 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 10000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
TSSOP (DGG) 48 101.25 mm² (12.5 mm × 8.1 mm) TVSOP (DGV) 48 62.08 mm² (9.7 mm × 6.4 mm) SSOP (DL) 48 164.358 mm² (15.88 mm × 10.35 mm)
  • High-Bandwidth Data Path (Up to 500 MHz)(1)
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron= 5 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5-V Switching With 3.3-V VCC
    • 0 to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz
    Maximum)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications
  • High-Bandwidth Data Path (Up to 500 MHz)(1)
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron= 5 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0 to 5-V Switching With 3.3-V VCC
    • 0 to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz
    Maximum)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications

The SN74CB3Q16244 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q16244 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16244 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16244 device is organized as four 4-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 4-bit bus switches, two 8-bit bus switches, or one 16-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q16244 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q16244 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16244 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16244 device is organized as four 4-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 4-bit bus switches, two 8-bit bus switches, or one 16-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

ダウンロード 字幕付きのビデオを表示 ビデオ

技術資料

結果が見つかりませんでした。検索条件をクリアしてから、再度検索を試してください。
4 をすべて表示
上位の文書 タイプ タイトル フォーマットオプション 最新の英語版をダウンロード 日付
* データシート SN74CB3Q16244 16-Bit FET Bus Switch 2.5-V – 3.3-V Low-Voltage High-Bandwidth Bus Switch データシート (Rev. A) PDF | HTML 2015/09/18
アプリケーション・ノート テキサス インスツルメンツの信号スイッチの選定 PDF | HTML PDF | HTML 2026/06/29
アプリケーション・ノート Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/01
アプリケーション概要 Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/01/06

設計と開発

その他のアイテムや必要なリソースを参照するには、以下のタイトルをクリックして詳細ページをご覧ください。

シミュレーション・モデル

SN74CB3Q16244 IBIS Model

SCDM075.ZIP (25 KB) - IBIS モデル
サポート対象の製品とハードウェア
パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
TSSOP (DGG) 48 Ultra Librarian
TVSOP (DGV) 48 Ultra Librarian
SSOP (DL) 48 Ultra Librarian

購入と品質

推奨製品には、この TI 製品に関連するパラメータ、評価基板、またはリファレンス デザインが存在する可能性があります。

サポートとトレーニング

TI E2E™ フォーラムでは、TI のエンジニアからの技術サポートを提供

コンテンツは、TI 投稿者やコミュニティ投稿者によって「現状のまま」提供されるもので、TI による仕様の追加を意図するものではありません。使用条件をご確認ください。

TI 製品の品質、パッケージ、ご注文に関するお問い合わせは、TI サポートをご覧ください。​​​​​​​​​​​​​​

ビデオ