DRV7163
- 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
- Low GaN on-state resistance
- 4.4 mΩ RDS(ON) (per FET) at TA=25°C
- Enables efficient and high density power conversion
- High output current capability: 35Arms
- Supports upto 500 kHz PWM switching frequency
- Ultra-low propagation delay (20ns typical) and matching (2ns typical)
- Configurable slew rate of GaN FETs
- Zero-voltage detection (ZVD) reporting for dead-time optimization.
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead-time option for IO-limited controllers
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Robust protection
- Interlock protection in Independent Input Mode (IIM)
- Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
- VDS monitoring based cycle-by-cyle short-circuit protection
- Fault indication for over-temperature, supply under-voltage and short-circuit events
- Parasitic optimized QFN package with exposed top pad to support top-side cooling.
The DRV7163A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 날짜 |
|---|---|---|---|---|
| * | Data sheet | DRV7163A 100-V , 35A Half-Bridge GaN Motor Driver Power Stage datasheet | PDF | HTML | 2026/07/24 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
DRV8376EVM — DRV8376 평가 모듈
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| UNKNOWN (RAR) | 17 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.