DRV8163-Q1
- AEC-Q100 qualified for automotive applications:
- Temperature grade 1: –40°C to +125°C, TA
-
Functional Safety-Compliant Targeted
- Documentation available to aid functional safety system design
- 4.5V to 65V (70V abs. max) operating range
- DRV8163-Q1MOSFET ON resistance (HS + LS): 43mΩ
- Maximum output current = 40A
- 2 Interface options - HW or SPI
- PWM frequency operation up to 100kHz with automatic dead time assertion
- Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
- Integrated current sense (eliminates shunt resistor)
- Proportional load current output on IPROPI
-
Die temperature monitoring on IPROPI (SPI only)
- Configurable current regulation
- Protection and diagnostic features with configurable fault reaction (latched or retry)
- Load diagnostics in both the off-state and on-state to detect open load and short circuit
- Voltage monitoring on supply (VM)
- Over current protection
-
Over temperature warning (SPI only)
- Over temperature protection
- Fault indication on nFAULT pin
- Supports 1.8V, 3.3V, 5V logic inputs
- Low sleep current - 7µA typical at 25°C
- Device family comparison table
The DRV8163-Q1 is a wide-voltage, high-power fully integrated half-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.
The device integrates a N-channel half-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.
The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | DRV8163-Q1 Automotive 65V Half-Bridge Driver with Integrated Current Sense and Diagnostics datasheet (Rev. A) | PDF | HTML | 2025. 9. 17 | |
| 백서 | Design Considerations for 48V Automotive Body Motor Applications | PDF | HTML | 2026. 2. 17 | ||
| 백서 | 차량용 전자장치의 미래를 바꾸는 소프트웨어 정의 차량 (Rev. B) | PDF | HTML | Download English Version (Rev.B) | 2025. 1. 29 | |
| 애플리케이션 노트 | Calculating Power Dissipation for a H-Bridge or Half Bridge Driver (Rev. A) | PDF | HTML | 2021. 7. 22 | ||
| 애플리케이션 노트 | Daisy Chain Implementation for Serial Peripheral Interface (Rev. A) | 2021. 4. 7 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
DRV8163H-Q1EVM — 하드웨어 변형용 DRV8163-Q1 평가 모듈
DRV8163S-Q1EVM — SPI 모델용 DRV8163-Q1 평가 모듈
DRV816X-Q1-JUNCTION-TEMPERATURE-CALC — DRV816X-Q1 Junction Temperature Calculator
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| VQFN-HR (VAK) | 15 | Ultra Librarian |
주문 및 품질
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.