DRV8363-Q1

활성

정확한 전류 감지를 지원하는 차량용 24V~48V 배터리 3상 게이트 드라이버 유닛

제품 상세 정보

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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기술 자료

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5개 모두 보기
유형 직함 날짜
* Data sheet DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet (Rev. A) PDF | HTML 2025/12/16
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025/12/11
Application note 48V 차량용 시스템을 위한 모터 드라이버 회전율 고려 사항 PDF | HTML 2025/12/01
Technical article 액티브 단락 기술로 전기 자전거의 안전성 향상 PDF | HTML 2025/09/12
Certificate DRV8363-Q1EVM EU Declaration of Conformity (DoC) 2025/04/11

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

DRV8363-Q1EVM — DRV8363-Q1 평가 모듈

DRV8363-Q1EVM은 BLDC 모터용 DRV8363-Q1 게이트 드라이버를 기반으로 하는 30A, 3상 브러시리스 DC 드라이브 단계입니다.

EVM을 사용하면 사다리꼴 전류 및 제어를 사용하여 BLDC 모터를 구동하는 DRV8363-Q1 장치의 빠른 평가를 수행할 수 있습니다.

사용자 피드백을 위해 모든 전원 공급 장치의 상태 LED와 장애 표시등이 포함되어 있습니다. 이 키트에는 C2000 론치패드(LAUNCHXL-F280049C)가 필요하며 DRV8363-Q1을 제어하고 오류를 모니터링하고 보고하는 데 사용됩니다.

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사용 설명서: PDF | HTML
TI.com에서 구매 불가
레퍼런스 디자인

TIDA-020094 — 48V 영역 레퍼런스 설계

이 레퍼런스 설계에서는 고급 차량용 48V 저전압 레일 아키텍처의 동향을 보여줍니다. 이 설계에는 48V 백본 아키텍처 및 48V-12V 전력 변환 기능이 포함되어 있습니다. 이 레퍼런스 설계에서는 주요 제품에서 사용할 수 있는 48V 부하 드라이버를 보여줍니다. 이러한 제품으로는 HSS(고압측 스위치) 및 HSSC(고압측 스위치 컨트롤러), 스마트 eFuse 및 MD(모터 드라이버)가 있습니다.
Design guide: PDF
패키지 CAD 기호, 풋프린트 및 3D 모델
VQFN (RGZ) 48 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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