SN74CB3Q6800
- High-Bandwidth Data Path (Up To 500 MHz
) - 5-V Tolerant I/Os with Device Powered-Up or Powered-Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4.5
Typical) - Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
- Supports PCI Hot Plug
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
- Fast Switching Frequency (fON\= 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.75 mA Typical)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit
bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When
ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B
port is precharged to bias voltage (BIASV) through the equivalent of a 10-k resistor when ON\ is high, or if the
device is powered down (VCC = 0 V).
During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | SN74CB3Q6800 datasheet (Rev. A) | 2003/11/20 | |
| Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | 2022/06/02 | |
| Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | 2021/12/01 | |
| Application note | CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) | PDF | HTML | 2021/11/19 | |
| Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | 2021/01/06 | |
| Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015/12/02 | ||
| User guide | LOGIC Pocket Data Book (Rev. B) | 2007/01/16 | ||
| More literature | Digital Bus Switch Selection Guide (Rev. A) | 2004/11/10 | ||
| Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004/07/08 | ||
| User guide | Signal Switch Data Book (Rev. A) | 2003/11/14 | ||
| Application note | Bus FET Switch Solutions for Live Insertion Applications | 2003/02/07 | ||
| Selection guide | Logic Guide (Rev. AC) | PDF | HTML | 1994/06/01 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장
EVM-LEADED1 보드를 사용하면 TI의 공통 리드가 있는 패키지를 브레드보드 방식으로 빠르게 테스트할 수 있습니다. 이 보드에는 TI의 D, DBQ, DCT, DCU, DDF, DGS, DGV 및 PW 표면 실장 패키지를 100mil DIP 헤더로 변환할 수 있는 풋프린트가 있습니다.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SSOP (DBQ) | 24 | Ultra Librarian |
| TSSOP (PW) | 24 | Ultra Librarian |
| TVSOP (DGV) | 24 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.