SN74CBTD3306C

Name: SN74CBTD3306C
Brand: TI
SKU: SN74CBTD3306C
Price: 0.355 USD

활성

-2V 언더슈트 보호 및 레벨 전환(액티브 로우) 기능을 지원하는 5V, 1:1(SPST), 2채널 버스 스위치

지금 주문

데이터 시트

document-pdfAcrobat SN74CBTD3306C datasheet (Rev. A) (영어)

SN74CBTD3306C

활성

데이터 시트

지금 주문

제품 상세 정보

Protocols

Analog

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

20

Supply voltage (max) (V)

5.5

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5

CON (typ) (pF)

12.5

OFF-state leakage current (max) (µA)

10

Ron (max) (mΩ)

20000

VIH (min) (V)

2

VIL (max) (V)

0.8

Rating

Catalog

Protocols

Analog

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

20

Supply voltage (max) (V)

5.5

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5

CON (typ) (pF)

12.5

OFF-state leakage current (max) (µA)

10

Ron (max) (mΩ)

20000

VIH (min) (V)

2

VIL (max) (V)

0.8

Rating

Catalog

SOIC (D)

8

29.4 mm² 4.9 x 6

TSSOP (PW)

8

19.2 mm² 3 x 6.4

Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
Integrated Diode to V_CC Provides 5-V Input Down To 3.3-V Output Level Shift
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 3 Typical)
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 5 pF Typical)
Data and Control Inputs Provide Undershoot Clamp Diodes
V_CC Operating Range From 4.5 V to 5.5 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
Integrated Diode to V_CC Provides 5-V Input Down To 3.3-V Output Level Shift
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 3 Typical)
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 5 pF Typical)
Data and Control Inputs Provide Undershoot Clamp Diodes
V_CC Operating Range From 4.5 V to 5.5 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. This device features an integrated diode in series with V_CC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. This device features an integrated diode in series with V_CC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

filter

기타 프로토콜/버스 스위치 및 멀티플렉서 찾기

다운로드 스크립트와 함께 비디오 보기 동영상

관심 가지실만한 유사 제품

open-in-new

대안 비교

비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀

SN74CBT3306C

활성

-2V 언더슈트 보호 기능을 지원하는 5V, 1:1(SPST), 2채널 FET 버스 스위치(액티브 로우) Supports I2C and UART

기술 자료

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=TI에서 선정한 이 제품의 인기 문서

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13개 모두 보기

	유형	직함		날짜
*	Data sheet	SN74CBTD3306C datasheet (Rev. A)		2003/10/15
	Application note	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2022/06/02
	Application note	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	2021/12/01
	Application note	CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C)	PDF \| HTML	2021/11/19
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	2021/01/06
	Selection guide	Little Logic Guide 2018 (Rev. G)		2018/07/06
	Selection guide	Logic Guide (Rev. AB)		2017/06/12
	Application note	Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)		2015/12/02
	User guide	LOGIC Pocket Data Book (Rev. B)		2007/01/16
	More literature	Digital Bus Switch Selection Guide (Rev. A)		2004/11/10
	Application note	Semiconductor Packing Material Electrostatic Discharge (ESD) Protection		2004/07/08
	User guide	Signal Switch Data Book (Rev. A)		2003/11/14
	Application note	Bus FET Switch Solutions for Live Insertion Applications		2003/02/07

설계 및 개발

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평가 보드

DIP-ADAPTER-EVM — DIP 어댑터 평가 모듈

소형 표면 실장 IC(집적 회로)와 쉽고 빠르며 경제적인 방식으로 인터페이싱하는 방법을 제공하는 DIP 어댑터 평가 모듈(DIP-ADAPTER-EVM)로 연산 증폭기 프로토타이핑 및 테스트 속도를 높이세요. 제품에 포함된 Samtec 터미널 스트립을 사용하여 지원되는 연산 증폭기를 연결하거나 기존 회로에 직접 연결할 수 있습니다.

DIP 어댑터 EVM 키트는 다음을 포함해 가장 널리 사용되는 6개의 업계 표준 패키지를 지원합니다.

D 및 U(SOIC-8)
PW(TSSOP-8)
DGK(MSOP-8, VSSOP-8)
(...)

사용 설명서: PDF

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인터페이스 어댑터

LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장

EVM-LEADED1 보드를 사용하면 TI의 공통 리드가 있는 패키지를 브레드보드 방식으로 빠르게 테스트할 수 있습니다. 이 보드에는 TI의 D, DBQ, DCT, DCU, DDF, DGS, DGV 및 PW 표면 실장 패키지를 100mil DIP 헤더로 변환할 수 있는 풋프린트가 있습니다.

사용 설명서: PDF