TXS0104E

활성

오픈 드레인 및 푸시-풀 애플리케이션을 위한 4비트 양방향 전압 레벨 시프터

제품 상세 정보

Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75 NFBGA (NMN) 12 5 mm² 2 x 2.5 SOIC (D) 14 51.9 mm² 8.65 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5 WQFN (BQA) 14 7.5 mm² 3 x 2.5
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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기술 문서

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모두 보기11
유형 직함 날짜
* Data sheet TXS0104E4-Bit Bidirectional Voltage-Level Translator forOpen-Drain and Push-Pull Applications datasheet (Rev. K) PDF | HTML 2023/10/03
Application brief Integrated vs. Discrete Open Drain Level Translation PDF | HTML 2024/01/09
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023/09/29
Application brief Future-Proofing Your Level Shifter Design with TI's Dual Footprint Packages PDF | HTML 2023/09/05
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023/06/28
Application brief Enabling Next Generation Processors, FPGA, and ASSP with Voltage Level Translat PDF | HTML 2023/01/17
Application brief Enabling Smart Solar Inverter Designs with Level Translation PDF | HTML 2022/10/31
EVM User's guide TXS-EVM User's Guide (Rev. B) PDF | HTML 2021/06/08
Selection guide Voltage Translation Buying Guide (Rev. A) 2021/04/15
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 2018/03/28
Application note A Guide to Voltage Translation With TXS-Type Translators 2010/06/29

설계 및 개발

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평가 보드

14-24-LOGIC-EVM — 14핀~24핀 D, DB, DGV, DW, DYY, NS 및 PW 패키지용 로직 제품 일반 평가 모듈

14-24-LOGIC-EVM 평가 모듈(EVM)은 14핀~24핀 D, DW, DB, NS, PW, DYY 또는 DGV 패키지에 있는 모든 로직 장치를 지원하도록 설계되었습니다.

사용 설명서: PDF | HTML
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평가 보드

14-24-NL-LOGIC-EVM — 14핀~24핀 비 리드 패키지용 로직 제품 일반 평가 모듈

14-24-NL-LOGIC-EVM은 14핀~24핀 BQA, BQB, RGY, RSV, RJW 또는 RHL 패키지가 있는 로직 또는 변환 디바이스를 지원하도록 설계된 유연한 평가 모듈(EVM)입니다.

사용 설명서: PDF | HTML
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회로도: PDF
패키지 다운로드
DSBGA (YZT) 12 옵션 보기
NFBGA (NMN) 12 옵션 보기
SOIC (D) 14 옵션 보기
TSSOP (PW) 14 옵션 보기
UQFN (RUT) 12 옵션 보기
VQFN (RGY) 14 옵션 보기
WQFN (BQA) 14 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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