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TXS02324

활성

듀얼 공급 2:1 SIM 카드 멀티플렉서/트랜스레이터(슬롯 전용 듀얼 LDO)

지금 주문
데이터 시트

TXS02324

활성
데이터 시트 지금 주문

제품 상세 정보

Bits (#) 6 Data rate (max) (Mbps) 10 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 1.36 Vout (max) (V) 3.3 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 6 Data rate (max) (Mbps) 10 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 1.36 Vout (max) (V) 3.3 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
WQFN (RUK) 20 9 mm² 3 x 3
  • Level Translator
    • VDDIO Range of 1.7 V to 3.3 V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • Package
    • 20-Pin QFN (3 mm × 3 mm)
  • Level Translator
    • VDDIO Range of 1.7 V to 3.3 V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • Package
    • 20-Pin QFN (3 mm × 3 mm)

The TXS02324 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for configuration purposes, a 32-kHz clock input for internal timing generation.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS02324 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for configuration purposes, a 32-kHz clock input for internal timing generation.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
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기술 자료

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4개 모두 보기
유형 직함 날짜
* Data sheet Dual-Supply 2:1 SIM Card Multiplexer/Translator With Slot Dedicated Dual LDO datasheet 2011/02/09
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024/07/12
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024/07/03
Selection guide Voltage Translation Buying Guide (Rev. A) 2021/04/15

설계 및 개발

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패키지 핀 CAD 기호, 풋프린트 및 3D 모델
WQFN (RUK) 20 Ultra Librarian
TI의 평가 항목에 대한 표준 약관이 적용됩니다.

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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포럼 주제 모두 보기(영문)

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