TXS4558
- Level Translator
- VCC Range of 1.65 V to 3.3 V
- VBATT Range of 2.3V to 5.5V
- Low-Dropout (LDO) Regulator
- 50-mA LDO Regulator With Enable
- 1.8-V or 2.95-V Selectable Output Voltage
- Very Low Dropout: 100 mV (Max) at 50 mA
- Control and Communication Through GPIO Interface with Baseband Processor
- Isolated Clock Stop Mode for both SIM1 and SIM2 cards
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-B)
- 500-V Charged-Device Model (C101)
- 8kV HBM for SIM pins
- Package
- 20-Pin QFN (3 mm x 3 mm)
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection for all the other pins.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | Dual-SIM Card Power Supply with Level Translator & Dedicated Dual LDO datasheet (Rev. A) | 2011/09/27 | |
| Application note | Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators | PDF | HTML | 2024/07/12 | |
| Application note | Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) | PDF | HTML | 2024/07/03 | |
| Selection guide | Voltage Translation Buying Guide (Rev. A) | 2021/04/15 | ||
| User guide | TXS4558EVM | 2011/09/22 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TXS4558EVM — TXS4558 평가 모듈
텍사스 인스트루먼트 TXS4558 평가 모듈 (EVM) 은 모바일 핸드셋 애플리케이션의 데이터를 저장하기 위해 무선 베이스밴드 프로세서를 2개의 개별 SIM 가입자 카드와 상호작용하는 완전한 이중 전원 대기 SIM(Smart Identity Module) 카드 솔루션인 TXS4558 을 보여주기 위해 설계되었습니다. 이 장치는 SIM과 SIM 모드 간에 전환하는 데 GPIO 신호가 사용되는 GPIO 제어 및 통신을 대상으로 하며 단일 인터페이스로 2개의 SIM 을 지원할 수 있습니다.
이 EVM 에는 SIM 카드용 소켓 2개와 (...)
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| WQFN (RUK) | 20 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치