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LM5111

ACTIVE

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO

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Data sheet

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UCC27624 ACTIVE 30V VDD, 5A/5A dual-channel low-side driver with 4V UVLO and low propagation delay Wide VDD and enable

LM5111

ACTIVE
Data sheet Order now

Product details

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features UVLO Configured to Drive PFET through OUT_A Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features UVLO Configured to Drive PFET through OUT_A Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5-A Sink and 3-A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
  • LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5-A Sink and 3-A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
  • LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
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UCC27524A ACTIVE 5-A/5-A dual-channel gate driver with 5-V UVLO, enable, and negative input voltage handling This product has higher drive current with 5-A sink/source, as well as faster propagation delay (13-ns) , rise time (7-ns) and fall time (6-ns).

Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LM5111 Dual 5-A Compound Gate Driver datasheet (Rev. H) PDF | HTML Sep 28, 2016
Application note Why use a Gate Drive Transformer? PDF | HTML Mar 4, 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML Jan 22, 2024
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML Nov 10, 2021
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application note Improving Efficiency of DC-DC Conversion through Layout May 7, 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs Jan 18, 2019
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) Nov 26, 2018
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018
Selection guide Power Management Guide 2018 (Rev. R) Jun 25, 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole Mar 16, 2018

Design & development

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Evaluation board

UCC27423-4-5-Q1EVM — UCC2742xQ1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable Evaluation Module (EVM)

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
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LM5111-1M TINA-TI Transient Reference Design

SNVM404.TSC (146 KB) - TINA-TI reference design
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LM5111-1M TINA-TI Transient Spice Model

SNVM405.ZIP (9 KB) - TINA-TI Spice model
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LM5111-2M TINA-TI Transient Reference Design

SNVM411.TSC (147 KB) - TINA-TI reference design
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LM5111-2M TINA-TI Transient Spice Model

SNVM410.ZIP (10 KB) - TINA-TI Spice model
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LM5111-3M TINA-TI Transient Reference Design

SNVM414.TSC (152 KB) - TINA-TI reference design
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LM5111-3M TINA-TI Transient Spice Model

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LM5111-4M TINA-TI Transient Reference Design

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LM5111-4M TINA-TI Transient Spice Model

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LM5111_1M PSpice Transient Model

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LM5111_1M Unencrypted PSpice Transient Model

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LM5111_2M PSpice Transient Model

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LM5111_2M Unencrypted PSpice Transient Model

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LM5111_3M PSpice Transient Model

SNVM359.ZIP (44 KB) - PSpice model
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LM5111_3M Unencrypted PSpice Transient Model

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LM5111_4M PSpice Transient Model

SNVM357.ZIP (44 KB) - PSpice model
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LM5111_4M Unencrypted PSpice Transient Model

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Reference design

TIDM-AUTO-DC-LED-LIGHTING — Multiple Channels of High Density LED Control for Automotive Headlight Applications

This design, featuring the TMS320F2803x Piccolo microcontroller, implements a high efficiency multi-channel DC-DC LED control system for typically automotive lighting systems. The design support up to 6 channels of LED controls each with maximum of 1.2A current driving capabilities. With a  (...)

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