軟體開發套件 (SDK)
PCM-3P-PC802 — RANsemi small cell reference design
RANsemi small cell reference design
AFE10004
- Local and remote diode temperature sensor
- ±2.5°C accuracy, maximum
- 0.0625°C resolution
- Internal EEPROM for autonomous operation
- Four independent transfer functions storage
- Device configuration storage
- Open space for user storage
- Four analog outputs
- Four monotonic DACs: 1.22-mV resolution
- Automatically configured output ranges:
- Positive output voltage: 5.5 V, maximum
- Negative output voltage: –10 V, minimum
- High current drive capability:
- Source up to 100 mA
- Sink up to 20 mA
- High capacitive load tolerant: up to 15 µF
- Gate bias on and off control switches
- Two programmable off voltages
- Two auxiliary DACs: 1.22-mV resolution
- Fast switching time: 50 ns, typical
- Low resistance: 3 Ω, maximum
- Two programmable off voltages
- Built-in sequencing control
- Internal 2.5-V reference
- SPI and I2C interfaces: 1.7-V to 3.6-V operation
- SPI: 4-wire Interface
- I2C: Eight selectable slave addresses
- Specified temperature range: –40°C to +125°C
- Operating temperature range –40°C to +150°C
The AFE10004 is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four, independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM, allowing any temperature effects to be corrected without additional external circuitry. After start up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.
The AFE10004 has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.
The function integration and wide operating temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN. Contact TI sales for the full data sheet.
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檢視所有 3 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches datasheet | PDF | HTML | 2020年 12月 8日 |
| EVM User's guide | AFE10004EVM User's Guide (Rev. A) | PDF | HTML | 2025年 6月 6日 | |
| Application note | Temperature Compensation of Power Amplifier FET Bias Voltages | PDF | HTML | 2021年 4月 29日 |
設計與開發
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模擬工具
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一，涵蓋我們的類比和電源產品組合，以及特定類比行為模型，且使用無需支付費用。
PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前，建立完整的終端設備設計和解決方案原型，進而縮短上市時間並降低開發成本。
在 PSpice for TI 設計與模擬工具中，您可以搜尋 TI (...)
PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前，建立完整的終端設備設計和解決方案原型，進而縮短上市時間並降低開發成本。
在 PSpice for TI 設計與模擬工具中，您可以搜尋 TI (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。