AFE10004-EP

現行

具有整合式輸出開關的強化型產品四通道功率放大器監視器和控制器

產品詳細資料

Number of DAC channels 4 DAC resolution (bps) 13 Temperature sensing Local, Remote Interface type I2C, SPI Features Built-in sequencing control, EEPROM, High current drive capability Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product DAC output full-scale (min) (V) -10 DAC output full-scale (max) (V) 10
Number of DAC channels 4 DAC resolution (bps) 13 Temperature sensing Local, Remote Interface type I2C, SPI Features Built-in sequencing control, EEPROM, High current drive capability Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product DAC output full-scale (min) (V) -10 DAC output full-scale (max) (V) 10
VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • Specified for defense and aerospace applications
  • Controlled baseline
  • One assembly and test site
  • One fabrication site
  • Product traceability
  • Extended product life cycle
  • Local and remote diode temperature sensor
    • ±2.5°C error, maximum
    • 0.0625°C resolution
  • Internal EEPROM for autonomous operation
    • Storage for four independent transfer functions
    • Device configuration storage
    • Open space for user storage
    • Qualified for 15-year retention
  • Four analog outputs
    • Four monotonic DACs: 1.22mV resolution
    • Automatically configured output ranges:
      • Positive output voltage: 5.5V, maximum
      • Negative output voltage: –10V, minimum
    • High current drive capability:
      • Source up to 100mA
      • Sink up to 20mA
    • High capacitive load tolerant: up to 15µF
  • Gate bias on and off control switches
    • Two programmable off voltages
      • Two auxiliary DACs: 1.22mV resolution
    • Fast switching time: 50ns, typical
    • Low resistance: 3Ω, maximum
  • Built-in sequencing control
  • Internal 2.5V reference
  • SPI and I2C interfaces: 1.7V to 3.6V operation
    • SPI: 4-wire Interface
    • I2C: Eight selectable peripheral addresses
  • Specified temperature range: –55°C to +125°C
  • Specified for defense and aerospace applications
  • Controlled baseline
  • One assembly and test site
  • One fabrication site
  • Product traceability
  • Extended product life cycle
  • Local and remote diode temperature sensor
    • ±2.5°C error, maximum
    • 0.0625°C resolution
  • Internal EEPROM for autonomous operation
    • Storage for four independent transfer functions
    • Device configuration storage
    • Open space for user storage
    • Qualified for 15-year retention
  • Four analog outputs
    • Four monotonic DACs: 1.22mV resolution
    • Automatically configured output ranges:
      • Positive output voltage: 5.5V, maximum
      • Negative output voltage: –10V, minimum
    • High current drive capability:
      • Source up to 100mA
      • Sink up to 20mA
    • High capacitive load tolerant: up to 15µF
  • Gate bias on and off control switches
    • Two programmable off voltages
      • Two auxiliary DACs: 1.22mV resolution
    • Fast switching time: 50ns, typical
    • Low resistance: 3Ω, maximum
  • Built-in sequencing control
  • Internal 2.5V reference
  • SPI and I2C interfaces: 1.7V to 3.6V operation
    • SPI: 4-wire Interface
    • I2C: Eight selectable peripheral addresses
  • Specified temperature range: –55°C to +125°C

The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.

The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.

The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.

The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.

The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.

The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 AFE10004-EP 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches datasheet (Rev. A) PDF | HTML 2025/12/3
* 輻射及可靠性報告 AFE10004-EP Enhanced Product Qualification and Reliability Report (Rev. B) PDF | HTML 2025/11/7

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