AFE10004-EP
- Specified for defense and aerospace applications
- Controlled baseline
- One assembly and test site
- One fabrication site
- Product traceability
- Extended product life cycle
- Local and remote diode temperature sensor
- ±2.5°C error, maximum
- 0.0625°C resolution
- Internal EEPROM for autonomous operation
- Storage for four independent transfer functions
- Device configuration storage
- Open space for user storage
- Qualified for 15-year retention
- Four analog outputs
- Four monotonic DACs: 1.22mV resolution
- Automatically configured output ranges:
- Positive output voltage: 5.5V, maximum
- Negative output voltage: –10V, minimum
- High current drive capability:
- Source up to 100mA
- Sink up to 20mA
- High capacitive load tolerant: up to 15µF
- Gate bias on and off control switches
- Two programmable off voltages
- Two auxiliary DACs: 1.22mV resolution
- Fast switching time: 50ns, typical
- Low resistance: 3Ω, maximum
- Two programmable off voltages
- Built-in sequencing control
- Internal 2.5V reference
- SPI and I2C interfaces: 1.7V to 3.6V operation
- SPI: 4-wire Interface
- I2C: Eight selectable peripheral addresses
- Specified temperature range: –55°C to +125°C
The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.
The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.
The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | AFE10004-EP 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches datasheet (Rev. A) | PDF | HTML | 2025年 12月 3日 |
| * | Radiation & reliability report | AFE10004-EP Enhanced Product Qualification and Reliability Report (Rev. B) | PDF | HTML | 2025年 11月 7日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
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