產品詳細資料

Number of channels 2 Rating Automotive Forward/reverse channels 2 forward / 0 reverse Integrated isolated power No Isolation rating Functional Default output High, Low Data rate (max) (Mbps) 50 Protocols GPIO, PWM Working isolation voltage (VIOWM) (Vrms) 450 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
Number of channels 2 Rating Automotive Forward/reverse channels 2 forward / 0 reverse Integrated isolated power No Isolation rating Functional Default output High, Low Data rate (max) (Mbps) 50 Protocols GPIO, PWM Working isolation voltage (VIOWM) (Vrms) 450 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • AEC-Q100 qualified with the following results:
    • Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x-Q1) and Low (ISO652xF-Q1) Options
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Narrow-SOIC (8-D) package options
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • AEC-Q100 qualified with the following results:
    • Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x-Q1) and Low (ISO652xF-Q1) Options
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Narrow-SOIC (8-D) package options

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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* Data sheet ISO652x-Q1 General Purpose Dual-Channel Automotive Functional Isolators datasheet (Rev. A) PDF | HTML 2025年 2月 24日
White paper Shrinking Solution Size and Cost With Functional Isolation PDF | HTML 2024年 8月 22日

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ISO6521REUEVM — 適用數位訊號雙通道功能隔離器的 ISO6521 評估模組

ISO6521REUEVM 是一款評估模組 (EVM),用於評估採用 8 接腳 DFN 封裝的雙通道 ISO6521 功能隔離器。EVM 提供額外體積,讓使用者能夠靈活新增元件,以測試各種常見應用。EVM 也具備多個測試點,以透過最少外部元件來評估裝置。

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