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ISOS510-SEP

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耐輻射電晶體輸出、採用航太級強化塑膠且具類比行為的光電模擬器

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ISOS510-SEP

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Rating Space Product type Analog transistor output Input type DC Output type Analog transistor Withstand isolation voltage (VISO) (Vrms) 3750 Number of channels 1 Current transfer ratio (CTR) (min) (%) 100 Current transfer ratio (CTR) (max) (%) 155 Forward voltage (typ) (V) 1.2 Forward current (IF) (max) (mA) 30 Operating temperature range (°C) -55 to 125 Turnon time (enable) (µs) 3.5, 5.7 Turnoff time (disable) (µs) 3.6, 8, 10 Creepage (min) (mm) 5 Clearance (min) (mm) 5
Rating Space Product type Analog transistor output Input type DC Output type Analog transistor Withstand isolation voltage (VISO) (Vrms) 3750 Number of channels 1 Current transfer ratio (CTR) (min) (%) 100 Current transfer ratio (CTR) (max) (%) 155 Forward voltage (typ) (V) 1.2 Forward current (IF) (max) (mA) 30 Operating temperature range (°C) -55 to 125 Turnon time (enable) (µs) 3.5, 5.7 Turnoff time (disable) (µs) 3.6, 8, 10 Creepage (min) (mm) 5 Clearance (min) (mm) 5
SOIC (DFG) 4 24.57 mm² 3.51 x 7
  • Radiation Performance
    • Total Ionizing Dose (TID) Characterized (ELDRS-Free) up to 50krad(Si)
    • TID RLAT up to 30krad(Si)
    • Single-Event Latch-up (SEL) Immune to LET up to 43MeV-cm2/mg at 125℃
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized LET up to 43MeV-cm2/mg
  • Space Enhanced Plastic (Space EP)
    • Meets NASA ASTM E595 Outgassing Spec
    • Military Temp Range (-55℃ to 125℃)
  • 1-channel diode input
  • Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 100% to 155%
  • High collector-emitter voltage: VCE (max) = 30V
  • Robust SiO2 isolation barrier
    • Isolation rating: 3750VRMS
    • Working voltage: 500VRMS, 707VPK
    • Surge capability: up to 10kV
  • Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
  • Small 4-pin package (DFG)
  • Safety-related certifications:
    • UL 1577 recognition
    • DIN EN IEC 60747-17 (VDE 0884-17) conformity per VDE
  • Radiation Performance
    • Total Ionizing Dose (TID) Characterized (ELDRS-Free) up to 50krad(Si)
    • TID RLAT up to 30krad(Si)
    • Single-Event Latch-up (SEL) Immune to LET up to 43MeV-cm2/mg at 125℃
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized LET up to 43MeV-cm2/mg
  • Space Enhanced Plastic (Space EP)
    • Meets NASA ASTM E595 Outgassing Spec
    • Military Temp Range (-55℃ to 125℃)
  • 1-channel diode input
  • Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 100% to 155%
  • High collector-emitter voltage: VCE (max) = 30V
  • Robust SiO2 isolation barrier
    • Isolation rating: 3750VRMS
    • Working voltage: 500VRMS, 707VPK
    • Surge capability: up to 10kV
  • Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
  • Small 4-pin package (DFG)
  • Safety-related certifications:
    • UL 1577 recognition
    • DIN EN IEC 60747-17 (VDE 0884-17) conformity per VDE

The ISOS510 radiation-tolerant device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510 is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510 enables these devices to be used in aerospace & defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.

The ISOS510 radiation-tolerant device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510 is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510 enables these devices to be used in aerospace & defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.
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* Data sheet ISOS510-SEP Radiation Tolerant , Current-Driven Analog Isolator With Transistor Output datasheet PDF | HTML 2025年 8月 1日

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