產品詳細資料

Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.

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類型 標題 日期
* Data sheet SN74HCT244-EP datasheet 2004年 1月 6日
* VID SN74HCT244-EP VID V6204698 2016年 6月 21日
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
Application note Designing With Logic (Rev. C) 1997年 6月 1日
Application note SN54/74HCT CMOS Logic Family Applications and Restrictions 1996年 5月 1日
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 1996年 4月 1日

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