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SN74HCT244-EP

現行

具 TTL 相容 CMOS 輸入和 3 態輸出的強化型產品 8 通道、4.5V 至 5.5V 緩衝器

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產品規格表

SN74HCT244-EP

現行
產品規格表 立即訂購

產品詳細資料

Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 Supply current (max) (µA) 80 IOH (max) (mA) -6 Input type TTL-Compatible CMOS Output type 3-State Features Balanced outputs, Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Operating Voltage Range of 4.5 V to 5.5 V
  • High-Current Inverting Outputs Drive Up To 15 LSTTL Loads
  • Low Power Consumption, 160-µA Max ICC
  • Typical tpd = 13 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74HCT244 device is organized as two 4-bit buffers/drivers, with separate output-enable (OE)\ inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.
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重要文件 類型 標題 格式選項 日期
* Data sheet SN74HCT244-EP datasheet 2004年 1月 6日

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

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