TXS4555
- Level translator
- VCC range of 1.65V to 3.3V
- VBATT range from 2.3V to 5.5V
- Low-dropout (LDO) regulator
- 50mA LDO regulator with enable
- Selectable output voltage of 1.8V or 2.95V
- Input voltage range of 2.3V to 5.5V
- Very low dropout of 100mV (maximum) at 50mA
- Incorporates shutdown for the SIM card signals according to ISO7816-3
- ESD protection exceeds JESD 22
- 2000V Human-body model (A114-B)
- 500V Charged-device model (C101)
- 8kV HBM for SIM pins
- Package
- 16-Pin VQFN (3mm × 3mm)
- 12-Pin UQFN (2mm × 1.7mm)
The TXS4555 device is a Smart Identity Module (SIM) card option that interfaces wireless baseband processors with a SIM card to store I/O for mobile handheld applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. The device includes a high-speed level translator that can support Class-B (2.95V) and Class-C (1.8V) interfaces, and a low dropout (LDO) voltage regulator with output voltages that are selectable between these interfaces.
The device has two supply voltage pins. VCC can operate over the full range of 1.65V to 3.3V and VBATT from 2.3 to 5.5V. VPWR is set to 1.8V or 2.95V, and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5V and outputs 1.8V or 2.95V at 50mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to interface low-voltage microprocessors to SIM cards operating at 1.8V or 2.95V.
The TXS4555 incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. During an accidental shutdown of the phone, shutting down the SIM card helps prevent data corruption. The device has 8 kV HBM protection for the SIM pins and standard 2 kV HBM protection for all other pins.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | TXS4555 1.8V/3V SIM Card Power Supply With Level Translator datasheet (Rev. C) | PDF | HTML | 2026年 5月 27日 |
| Application note | Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators | PDF | HTML | 2024年 7月 12日 | |
| Application note | Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) | PDF | HTML | 2024年 7月 3日 | |
| Selection guide | Voltage Translation Buying Guide (Rev. A) | 2021年 4月 15日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| UQFN (RUT) | 12 | Ultra Librarian |
| VQFN (RGT) | 16 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
- 晶圓廠位置
- 組裝地點