產品詳細資料

Bits (#) 3 Data rate (max) (Mbps) 50 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.65 Vin (max) (V) 3.3 Vout (min) (V) 1.65 Vout (max) (V) 3.3 Applications SIM Card Features Single LDO Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 3 Data rate (max) (Mbps) 50 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.65 Vin (max) (V) 3.3 Vout (min) (V) 1.65 Vout (max) (V) 3.3 Applications SIM Card Features Single LDO Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
VQFN (RGT) 16 9 mm² (3 mm × 3 mm) UQFN (RUT) 12 3.4 mm² (2 mm × 1.7 mm)
  • Level translator
    • VCC range of 1.65V to 3.3V
    • VBATT range from 2.3V to 5.5V
  • Low-dropout (LDO) regulator
    • 50mA LDO regulator with enable
    • Selectable output voltage of 1.8V or 2.95V
    • Input voltage range of 2.3V to 5.5V
    • Very low dropout of 100mV (maximum) at 50mA
  • Incorporates shutdown for the SIM card signals according to ISO7816-3
  • ESD protection exceeds JESD 22
    • 2000V Human-body model (A114-B)
    • 500V Charged-device model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 16-Pin VQFN (3mm × 3mm)
    • 12-Pin UQFN (2mm × 1.7mm)
  • Level translator
    • VCC range of 1.65V to 3.3V
    • VBATT range from 2.3V to 5.5V
  • Low-dropout (LDO) regulator
    • 50mA LDO regulator with enable
    • Selectable output voltage of 1.8V or 2.95V
    • Input voltage range of 2.3V to 5.5V
    • Very low dropout of 100mV (maximum) at 50mA
  • Incorporates shutdown for the SIM card signals according to ISO7816-3
  • ESD protection exceeds JESD 22
    • 2000V Human-body model (A114-B)
    • 500V Charged-device model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 16-Pin VQFN (3mm × 3mm)
    • 12-Pin UQFN (2mm × 1.7mm)

The TXS4555 device is a Smart Identity Module (SIM) card option that interfaces wireless baseband processors with a SIM card to store I/O for mobile handheld applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. The device includes a high-speed level translator that can support Class-B (2.95V) and Class-C (1.8V) interfaces, and a low dropout (LDO) voltage regulator with output voltages that are selectable between these interfaces.

The device has two supply voltage pins. VCC can operate over the full range of 1.65V to 3.3V and VBATT from 2.3 to 5.5V. VPWR is set to 1.8V or 2.95V, and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5V and outputs 1.8V or 2.95V at 50mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to interface low-voltage microprocessors to SIM cards operating at 1.8V or 2.95V.

The TXS4555 incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. During an accidental shutdown of the phone, shutting down the SIM card helps prevent data corruption. The device has 8 kV HBM protection for the SIM pins and standard 2 kV HBM protection for all other pins.

The TXS4555 device is a Smart Identity Module (SIM) card option that interfaces wireless baseband processors with a SIM card to store I/O for mobile handheld applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. The device includes a high-speed level translator that can support Class-B (2.95V) and Class-C (1.8V) interfaces, and a low dropout (LDO) voltage regulator with output voltages that are selectable between these interfaces.

The device has two supply voltage pins. VCC can operate over the full range of 1.65V to 3.3V and VBATT from 2.3 to 5.5V. VPWR is set to 1.8V or 2.95V, and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5V and outputs 1.8V or 2.95V at 50mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to interface low-voltage microprocessors to SIM cards operating at 1.8V or 2.95V.

The TXS4555 incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. During an accidental shutdown of the phone, shutting down the SIM card helps prevent data corruption. The device has 8 kV HBM protection for the SIM pins and standard 2 kV HBM protection for all other pins.

下載 觀看有字幕稿的影片 影片

技術文件

找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 4
重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TXS4555 1.8V/3V SIM Card Power Supply With Level Translator datasheet (Rev. C) PDF | HTML 2026/5/27
應用說明 Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024/7/12
應用說明 Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024/7/3
選擇指南 Voltage Translation Buying Guide (Rev. A) 2021/4/15

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

模擬型號

TXS4555 IBIS Model

SBOM452.ZIP (47 KB) - IBIS 模型
支援產品和硬體
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGT) 16 Ultra Librarian
UQFN (RUT) 12 Ultra Librarian

訂購與品質

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片