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Product details

Parameters

RDS (on) (Milliohm) 50 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

Package | Pins | Size

VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs

Features

  • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns Propagation delay for MHz operation
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25 to 100V/ns User adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with less than 100 ns response
    • Greater than 150 V/ns Slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Under voltage lock out (UVLO) Protection on all supply rails
  • Robust protection
    • LMG3410R050: Latched overcurrent protection
    • LMG3411R050: Cycle-by-cycle overcurrent protection

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    open-in-new Find other Gallium nitride (GaN) ICs

    Description

    The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

    The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

    open-in-new Find other Gallium nitride (GaN) ICs
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    More information

    Get started with your GaN design today with the LMG3411R050 development kit:

    Technical documentation

    = Top documentation for this product selected by TI
    No results found. Please clear your search and try again. View all 7
    Type Title Date
    * Datasheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) Jan. 16, 2020
    User guides Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) Mar. 08, 2019
    Application notes Third quadrant operation of GaN Feb. 25, 2019
    Technical articles Don’t underestimate the power of an LDO Oct. 19, 2013
    Technical articles How to optimize your DSP power budget Oct. 03, 2013
    Technical articles "X" Marks the spot - 7 Treasures in a pirate engineer's treasure chest Sep. 19, 2013
    Technical articles Power Tips: How to be discrete Sep. 17, 2013

    Design & development

    For additional terms or required resources, click any title below to view the detail page where available.

    Hardware development

    EVALUATION BOARDS Download
    LMG3410R070 daughter card
    LMG3410-HB-EVM
    document-generic User guide
    199
    Description
    The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
    Features
    • Input voltage operates up to 600V
    • Simple open loop design to evaluate performance of LMG3410R070
    • Single PWM input on board for PWM signal with 50 ns dead time
    • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
    EVALUATION BOARDS Download
    LMG3411R050 daughter card
    LMG3411EVM-018
    document-generic User guide
    199
    Description
    LMG3411EVM-018 configures two LMG3411R050 GaN FETs in a half bridge with cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
    Features
    • Input voltage operates up to 600V
    • Simple open loop design to evaluate performance of LMG3411R050
    • Single PWM input on board for PWM signal with 50 ns dead time
    • Cycle by cycle over current protection function
    • Convenient probe points for logic and power stage measurements with oscilloscope probes that have (...)
    EVALUATION BOARDS Download
    document-generic User guide
    199
    Description
    The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
    Features
    • Input voltage operates up to 600V
    • Simple open loop design to evaluate performance of LMG3410
    • Single PWM input on board for PWM signal with 50 ns dead time
    • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

    Design tools & simulation

    SIMULATION TOOLS Download
    PSpice® for TI design and simulation tool
    PSPICE-FOR-TI — PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
    Features
    • Leverages Cadence PSpice Technology
    • Preinstalled library with a suite of digital models to enable worst-case timing analysis
    • Dynamic updates ensure you have access to most current device models
    • Optimized for simulation speed without loss of accuracy
    • Supports simultaneous analysis of multiple products
    • (...)

    Reference designs

    REFERENCE DESIGNS Download
    Highly Efficient, 1.6kW High Density GaN Based 1MHz CrM Totem-pole PFC Converter Reference Design
    TIDA-00961 — High frequency Critical-Conduction-Mode (CrM) Totem-pole power factor correction (PFC) is a simple approach for designing high density power solutions using GaN.  The TIDA-0961 reference design uses TI’s 600V GaN power stage, LMG3410, and TI’s Piccolo™ F280049 controller. This (...)
    document-generic Schematic document-generic User guide
    REFERENCE DESIGNS Download
    400V – 12V/500W High Frequency Resonant Converter Reference Design Using High Voltage GaN Devices
    PMP20289 — The PMP20289 was built and tested to verify the performance of a high frequency (>400kHz nominal switching frequency) LLC series resonant converter (LLC-SRC) implemented with Texas Instrument’s high voltage GaN FETs under nominal (390V to 12V) voltage conversion. The digital controller (...)
    document-generic Schematic document-generic User guide
    Design files
    REFERENCE DESIGNS Download
    High Efficiency and High Power Density 1kW Resonant Converter Reference Design with TI HV GaN FET
    PMP20637 — This reference design is a high efficiency, high power density and light weight resonant converter reference design. It converts a 390V input to a 48V/1kW output. The PMP20637 power stage has over 140W/in^3 power density. The whole board weight is less than 210g. With fixed 950kHz switching (...)
    document-generic Schematic document-generic User guide
    Design files
    REFERENCE DESIGNS Download
    99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design
    PMP20873 — Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage (...)
    document-generic Schematic document-generic User guide
    REFERENCE DESIGNS Download
    24-V/500-W resonant converter reference design with HV GaN FET
    PMP21309 — This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
    document-generic Schematic document-generic User guide
    REFERENCE DESIGNS Download
    12-V/500-W resonant converter reference design with HV GaN FET
    PMP21842 — This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along with (...)
    document-generic Schematic document-generic User guide
    REFERENCE DESIGNS Download
    Current Sense Reference Design for High-Switching Transient Three-Phase Inverter for Servo Drives
    TIDA-01455 — The TIDA-01455 is a reinforced isolated, in-line, shunt-based, precision-phase current sensing reference design for three-phase inverters. One of the challenges with GaN or SiC inverters at high PWM switching is accurate phase current sensing across the shunt in presence of noise due to the high PWM (...)
    document-generic Schematic document-generic User guide
    REFERENCE DESIGNS Download
    In-phase current-sense reference design for 230-VAC motor drives using hall-effect current sensors
    TIDA-010059 — This reference design features the Hall-effect current sensor, TMCS1100, that can measure currents with an absolute error of < 1% (–40 to 125°C) and provide a working isolation voltage of up to 600 V. The low-resistance in-package current sensing element and lack of need for high-side (...)
    document-generic Schematic document-generic User guide

    CAD/CAE symbols

    Package Pins Download
    VQFN (RWH) 32 View options

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