Calculation tool
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3411R050
600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Data sheet
LMG3411R050
- TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
- Enables high density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20 ns Propagation delay for MHz operation
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25 to 100V/ns User adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with less than 100 ns response
- Greater than 150 V/ns Slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Under voltage lock out (UVLO) Protection on all supply rails
- Robust protection
- LMG3410R050: Latched overcurrent protection
- LMG3411R050: Cycle-by-cycle overcurrent protection
The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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Technical documentation
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View all 9 | Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) | PDF | HTML | 16 Jan 2020 |
| White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 02 Jun 2021 | |
| White paper | TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 | 18 Mar 2021 | ||
| White paper | 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 | 18 Mar 2021 | ||
| White paper | Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs | 05 Jan 2021 | ||
| Analog Design Journal | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 22 Sep 2020 | ||
| Application note | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | 04 Aug 2020 | ||
| EVM User's guide | Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) | 08 Mar 2019 | ||
| Application note | Third quadrant operation of GaN | 25 Feb 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
User guide: PDF
Daughter card
LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
User guide: PDF
Daughter card
LMG3411EVM-018 — LMG3411R050 600-V 50mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card
LMG3411EVM-018 configures two LMG3411R050 GaN FETs in a half bridge with cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF
Calculation tool
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
Supported products & hardware
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Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
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PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design
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This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
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This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
| Package | Pins | Download |
|---|---|---|
| VQFN (RWH) | 32 | View options |
Ordering & quality
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