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LMG3411R050

ACTIVE

600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

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Data sheet

LMG3411R050

ACTIVE
Data sheet Order now

Product details

VDS (Max) (V) 600 RDS (on) (Milliohm) 50 ID (Max) (A) 12 Rating Catalog
VDS (Max) (V) 600 RDS (on) (Milliohm) 50 ID (Max) (A) 12 Rating Catalog
VQFN (RWH) 32 64 mm² 8 x 8
  • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns Propagation delay for MHz operation
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25 to 100V/ns User adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with less than 100 ns response
    • Greater than 150 V/ns Slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Under voltage lock out (UVLO) Protection on all supply rails
  • Robust protection
    • LMG3410R050: Latched overcurrent protection
    • LMG3411R050: Cycle-by-cycle overcurrent protection
    • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
    • Enables high density power conversion designs
      • Superior system performance over cascode or stand-alone GaN FETs
      • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
      • Adjustable drive strength for switching performance and EMI control
      • Digital fault status output signal
      • Only +12 V unregulated supply needed
    • Integrated gate driver
      • Zero common source inductance
      • 20 ns Propagation delay for MHz operation
      • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
      • 25 to 100V/ns User adjustable slew rate
    • Robust protection
      • Requires no external protection components
      • Overcurrent protection with less than 100 ns response
      • Greater than 150 V/ns Slew rate immunity
      • Transient overvoltage immunity
      • Overtemperature protection
      • Under voltage lock out (UVLO) Protection on all supply rails
    • Robust protection
      • LMG3410R050: Latched overcurrent protection
      • LMG3411R050: Cycle-by-cycle overcurrent protection

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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      Technical documentation

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      Type Title Date
      * Data sheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) PDF | HTML 16 Jan 2020
      White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
      White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
      White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
      White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
      Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020
      Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) 04 Aug 2020
      EVM User's guide Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) 08 Mar 2019
      Application note Third quadrant operation of GaN 25 Feb 2019

      Design & development

      For additional terms or required resources, click any title below to view the detail page where available.

      Evaluation board

      LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

      The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

      User guide: PDF
      Not available on TI.com
      Daughter card

      LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

      The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
      User guide: PDF
      Not available on TI.com
      Daughter card

      LMG3411EVM-018 — LMG3411R050 600-V 50mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

      LMG3411EVM-018 configures two LMG3411R050 GaN FETs in a half bridge with cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
      User guide: PDF
      Not available on TI.com
      Calculation tool

      GaN CCM Boost PFC Power Loss Calculation Excel Sheet (Rev. B)

      SNOR029B.ZIP (205 KB)
      Download
      Calculation tool

      GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet (Rev. A)

      SNOR030A.ZIP (229 KB)
      Download
      Simulation tool

      PSPICE-FOR-TI — PSpice® for TI design and simulation tool

      PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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      Reference designs

      TIDA-010059 — In-phase current-sense reference design for 230-VAC motor drives using hall-effect current sensors

      This reference design features the Hall-effect current sensor, TMCS1100, that can measure currents with an absolute error of < 1% (–40 to 125°C) and provide a working isolation voltage of up to 600 V. The low-resistance in-package current sensing element and lack of need for high-side (...)
      Design guide: PDF
      Schematic: PDF
      Reference designs

      PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design

      Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
      Test report: PDF
      Schematic: PDF
      Reference designs

      PMP20289 — 400V – 12V/500W High Frequency Resonant Converter Reference Design Using High Voltage GaN Devices

      The PMP20289 was built and tested to verify the performance of a high frequency (>400kHz nominal switching frequency) LLC series resonant converter (LLC-SRC) implemented with Texas Instrument’s high voltage GaN FETs under nominal (390V to 12V) voltage conversion. The digital controller (...)
      Test report: PDF
      Schematic: PDF
      Reference designs

      PMP20637 — High Efficiency and High Power Density 1kW Resonant Converter Reference Design with TI HV GaN FET

      This reference design is a high efficiency, high power density and light weight resonant converter reference design. It converts a 390V input to a 48V/1kW output. The PMP20637 power stage has over 140W/in^3 power density. The whole board weight is less than 210g. With fixed 950kHz switching (...)
      Test report: PDF
      Schematic: PDF
      Reference designs

      PMP21309 — 24-V/500-W resonant converter reference design with HV GaN FET

      This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
      Test report: PDF
      Schematic: PDF
      Reference designs

      PMP21842 — 12-V/500-W resonant converter reference design with HV GaN FET

      This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
      Test report: PDF
      Schematic: PDF
      Package Pins Download
      VQFN (RWH) 32 View options

      Ordering & quality

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      • Material content
      • Qualification summary
      • Ongoing reliability monitoring

      Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

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