Calculation tool
Data sheet
LMG3410R070
- TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
- Enables High Density Power Conversion Designs
- Superior System Performance Over Cascode or Stand-alone GaN FETs
- Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
- Adjustable Drive Strength for Switching Performance and EMI Control
- Digital Fault Status Output Signal
- Only +12 V Unregulated Supply Needed
- Integrated Gate Driver
- Zero Common Source Inductance
- 20 ns Propagation Delay for MHz Operation
- Process-tuned Gate Bias Voltage for Reliability
- 25 to 100V/ns User Adjustable Slew Rate
- Robust Protection
- Requires No External Protection Components
- Over-current Protection with <100ns Response
- >150V/ns Slew Rate Immunity
- Transient Overvoltage Immunity
- Overtemperature Protection
- UVLO Protection on All Supply Rails
- Device Options:
- LMG3410R070: Latched Overcurrent Protection
- LMG3411R070: Cycle-by-cycle Overcurrent Protection
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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Technical documentation
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View all 28 Design & development
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Evaluation board
LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
User guide: PDF
Daughter card
LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
User guide: PDF
Calculation tool
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Products
Gallium nitride (GaN) ICs
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
TIDA-010062 — 1-kW, 80 plus titanium, GaN CCM totem pole bridgeless PFC and GaN half-bridge LLC reference design
This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. This highly efficient design supports two main power stages, including a front-end continuous conduction mode (CCM) totem-pole bridgeless (...)
Reference designs
TIDM-1007 — High efficiency GaN CCM totem pole bridgeless Power Factor Correction (PFC) reference design
Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power (...)
Reference designs
PMP41043 — 1.6-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000 and GaN
This reference design demonstrates a hybrid hysteresis control (HHC) method, a current mode control method on half-bridge LLC stage with a C2000 F28004x microcontroller. The hardware is based on TIDA-010062 which is 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC (...)
Test report: PDF
Reference designs
PMP41006 — 1-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000™ and GaN
This reference design demonstrates a hybrid hysteresis control (HHC) method, a kind of current-mode control method on half-bridge LLC stage with a C2000™ F28004x microcontroller. The hardware is based on TIDA-010062, which is 1-kW, 80-Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge (...)
Test report: PDF
Reference designs
TIDM-02008 — Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU
This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection. (...)
Reference designs
PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design
Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter. To achieve 99% efficiency, there are many design details that need to be taken into account. The PMP20873 reference design uses TI’s 600VGaN power stage, (...)
Reference designs
PMP21309 — 24-V/500-W resonant converter reference design with HV GaN FET
This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
Reference designs
PMP21842 — 12-V/500-W resonant converter reference design with HV GaN FET
This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
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| VQFN (RWH) | 32 | View options |
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