Home Power management Gallium nitride (GaN) ICs

LMG3410R070

ACTIVE
Order now

600-V 70mΩ GaN with integrated driver and protection

Data sheet
Top
600-V 70mΩ GaN with integrated driver and protection

LMG3410R070

ACTIVE
Data sheet Order now

Product details

Parameters

RDS (on) (Milliohm) 70 VDS (Max) (V) 600 ID (Max) (A) 12 Approx. price (US$) 7.92 | 1ku Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

Package | Pins | Size

VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs

Features

  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection

All trademarks are the property of their respective owners.

open-in-new Find other Gallium nitride (GaN) ICs

Description

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

 open-in-new Find other Gallium nitride (GaN) ICs
Download

More Information

Get started with your GaN design today with the LMG3410R070 development kit:

Technical documentation

= Featured
No results found. Please clear your search and try again. View all 21
Type Title Date
* Datasheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) Apr. 06, 2020
Technical articles Designing highly efficient, powerful and fast EV charging stations Aug. 06, 2019
Technical articles No avalanche? No problem! GaN FETs are surge robust Apr. 03, 2019
More literature GaN FET Reliability to Power-line Surges Under Use-conditions Mar. 25, 2019
Technical articles 20 million GaN reliability hours and counting Feb. 28, 2019
Application notes Third quadrant operation of GaN Feb. 25, 2019
Technical articles Searching for the newest innovations in power? Find them at APEC Feb. 08, 2019
White papers Direct-drive configuration for GaN devices (Rev. A) Nov. 19, 2018
Application notes High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET (Rev. A) Nov. 10, 2018
Application notes Thermal Considerations for Designing a GaN Power Stage (Rev. A) Oct. 23, 2018
Application notes Overcurrent Protection in High-Density GaN Power Designs Oct. 19, 2018
User guides Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout Board EVM (Rev. A) May 03, 2017
Selection guides Powering Tomorrow’s Datacenters with TI GaN: AC-to-Processor Apr. 05, 2017
White papers Enabling high-voltage power delivery through the power process chain Mar. 23, 2017
More literature Product-level Reliability of GaN Devices Apr. 26, 2016
White papers Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN Mar. 31, 2016
White papers Optimizing GaN performance with an integrated driver Feb. 24, 2016
White papers Redefining power management through high-voltage innovation Nov. 12, 2015
White papers GaN FET-Based CCM Totem-Pole Bridgeless PFC Oct. 02, 2015
White papers A comprehensive methodology to qualify the reliability of GaN products Mar. 02, 2015
White papers Advancing Power Supply Solutions Through the Promise of GaN Feb. 24, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
LMG3410R070 daughter card
LMG3410-HB-EVM
document-generic User guide
$199.00
Description
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
Features
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3410R070
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
View details
EVALUATION BOARDS Download
document-generic User guide
$199.00
Description
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
Features
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3410
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
View details

Design tools & simulation

SIMULATION MODELS Download
SNOM593B.ZIP (693 KB) - PSpice Model
SIMULATION MODELS Download
SNOM608B.TSC (158 KB) - TINA-TI Spice Model
CAD/CAE SYMBOLS Download
SNOR009A.ZIP (10151 KB)
CAD/CAE SYMBOLS Download
SNOR010.ZIP (4044 KB)

Reference designs

REFERENCE DESIGNS Download
Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU
TIDM-02008 — This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
High efficiency GaN CCM totem pole bridgeless Power Factor Correction (PFC) reference design
TIDM-1007 — Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power stage (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Highly Efficient, 1.6kW High Density GaN Based 1MHz CrM Totem-pole PFC Converter Reference Design
TIDA-00961 — High frequency Critical-Conduction-Mode (CrM) Totem-pole power factor correction (PFC) is a simple approach for designing high density power solutions using GaN.  The TIDA-0961 reference design uses TI’s 600V GaN power stage, LMG3410, and TI’s Piccolo™ F280049 controller. This (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
400V – 12V/500W High Frequency Resonant Converter Reference Design Using High Voltage GaN Devices
PMP20289 — The PMP20289 was built and tested to verify the performance of a high frequency (>400kHz nominal switching frequency) LLC series resonant converter (LLC-SRC) implemented with Texas Instrument’s high voltage GaN FETs under nominal (390V to 12V) voltage conversion. The digital controller (...)
document-generic Schematic document-generic User guide
Design files
View details
REFERENCE DESIGNS Download
High Efficiency and High Power Density 1kW Resonant Converter Reference Design with TI HV GaN FET
PMP20637 — This reference design is a high efficiency, high power density and light weight resonant converter reference design. It converts a 390V input to a 48V/1kW output. The PMP20637 power stage has over 140W/in^3 power density. The whole board weight is less than 210g. With fixed 950kHz switching (...)
document-generic Schematic document-generic User guide
Design files
View details
REFERENCE DESIGNS Download
99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design
PMP20873 — Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
24-V/500-W resonant converter reference design with HV GaN FET
PMP21309 — This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
12-V/500-W resonant converter reference design with HV GaN FET
PMP21842 — This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along with (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
Current Sense Reference Design for High-Switching Transient Three-Phase Inverter for Servo Drives
TIDA-01455 — The TIDA-01455 is a reinforced isolated, in-line, shunt-based, precision-phase current sensing reference design for three-phase inverters. One of the challenges with GaN or SiC inverters at high PWM switching is accurate phase current sensing across the shunt in presence of noise due to the high PWM (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC reference design
TIDA-010062 — This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. The highly efficient design supports two main power stages, including a front-end continuous conduction (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
VQFN (RWH) 32 View options

Ordering & quality

Support & training

TI E2E™ forums with technical support from TI engineers

View all topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Training series

View all TI training and videos

Videos

5.6 氮化鎵高功率電源設計指南

本課程介紹德州儀器在 GaN 上的最新發展與應用，並與傳統矽基的產品做比較。

Posted: 02-Jan-2019
Duration: 08:26

Related videos