TIDUF36A May   2023  – December 2023 DRV8328

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8328C
      2. 2.3.2 MSPM0G1507
      3. 2.3.3 CSD18510Q5B
      4. 2.3.4 TMP61
  9. 3System Design Theory
    1. 3.1 Power Stage Design: Three-Phase Inverter
      1. 3.1.1 Selecting Sense Resistor
    2. 3.2 Power Stage Design: DRV8328 Gate Driver
      1. 3.2.1 DRV8328 Features
      2. 3.2.2 AVDD Linear Voltage Regulator (LDO)
    3. 3.3 Power Stage Design: MSPM0 Microcontroller
      1. 3.3.1 Low-Side Current Sensing With MSPM0G1507
      2. 3.3.2 Temperature Sensing
    4. 3.4 Power Stage Design: External Interface Options and Indications
      1. 3.4.1 Hall Sensor Interface
      2. 3.4.2 Input Power Voltage Monitoring
      3. 3.4.3 Motor Speed Control
      4. 3.4.4 Direction of Rotation: Digital Input
      5. 3.4.5 Programming Interface for MCU
      6. 3.4.6 Data Transmission
      7. 3.4.7 LED Indicators
      8. 3.4.8 Sleep Mode Entry Control
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 Hardware Board Overview
    2. 4.2 Software Requirements
    3. 4.3 Test Setup
    4. 4.4 Test Results
      1. 4.4.1 Functional Evaluation of DRV8328 Gate Driver
        1. 4.4.1.1 DRV8328 Linear Regulator Performance
        2. 4.4.1.2 Gate Drive Voltage Generated by Gate Driver
      2. 4.4.2 MOSFET Switching Waveforms
      3. 4.4.3 Current Open Loop Test
      4. 4.4.4 Current Open Loop Load Test
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Revision History

2.3.3 CSD18510Q5B

The key requirements in selecting the MOSFET include:

  • High efficiency (MOSFET with low losses under operating condition)
  • Small size to reduce the form factor of the design
  • Low RDS(on)
  • High peak current capability

The reference design uses six CSD18510Q5B MOSFETs to implement the three phase inverter, thus meeting requirements. The MOSFET is rated up to 40 V, having an RDS(on) of 0.79-mΩ in a SON 5-mm × 6-mm NexFET™ power MOSFET that has been designed to minimize losses in power-conversion applications.