TIDUF36A May   2023  – December 2023 DRV8328

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 DRV8328C
      2. 2.3.2 MSPM0G1507
      3. 2.3.3 CSD18510Q5B
      4. 2.3.4 TMP61
  9. 3System Design Theory
    1. 3.1 Power Stage Design: Three-Phase Inverter
      1. 3.1.1 Selecting Sense Resistor
    2. 3.2 Power Stage Design: DRV8328 Gate Driver
      1. 3.2.1 DRV8328 Features
      2. 3.2.2 AVDD Linear Voltage Regulator (LDO)
    3. 3.3 Power Stage Design: MSPM0 Microcontroller
      1. 3.3.1 Low-Side Current Sensing With MSPM0G1507
      2. 3.3.2 Temperature Sensing
    4. 3.4 Power Stage Design: External Interface Options and Indications
      1. 3.4.1 Hall Sensor Interface
      2. 3.4.2 Input Power Voltage Monitoring
      3. 3.4.3 Motor Speed Control
      4. 3.4.4 Direction of Rotation: Digital Input
      5. 3.4.5 Programming Interface for MCU
      6. 3.4.6 Data Transmission
      7. 3.4.7 LED Indicators
      8. 3.4.8 Sleep Mode Entry Control
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 Hardware Board Overview
    2. 4.2 Software Requirements
    3. 4.3 Test Setup
    4. 4.4 Test Results
      1. 4.4.1 Functional Evaluation of DRV8328 Gate Driver
        1. 4.4.1.1 DRV8328 Linear Regulator Performance
        2. 4.4.1.2 Gate Drive Voltage Generated by Gate Driver
      2. 4.4.2 MOSFET Switching Waveforms
      3. 4.4.3 Current Open Loop Test
      4. 4.4.4 Current Open Loop Load Test
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Revision History

3.1.1 Selecting Sense Resistor

Power dissipation in sense resistors and the input offset error voltage of the op amps are important in selecting the sense resistance values. This design uses two sense resistors in parallel. Individually, each sense resistor is designed to carry a nominal RMS current of greater than 60 A, which combined in parallel allows for a total nominal RMS current exceeding 120 A. Choose the sense resistor according to power needs during design. A high sense resistance value increases the power loss in the resistors. The internal op amps of the MSPM0G1507 have an input offset error of 1.5 mV.

GUID-20230515-SS0I-Q2D4-P1PZ-DWV6SWCS39S8-low.svg Figure 3-1 Three-Phase MOSFET Inverter