Startseite Energiemanagement Gate-Treiber Halbbrückentreiber

UCC27211A-Q1

AKTIV

Halbbrücken-Gate-Treiber für Fahrzeuganwendungen, 4 A, 120 V mit 8 V UVLO und negativer Spannungsbeh

Produktdetails

Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 140 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -12 Features Negative voltage handling TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 140 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -12 Features Negative voltage handling TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
HSOIC (DDA) 8 29.4 mm² 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade –40°C to +140°C Ambient Operating Temperature Range
    • Device HBM Classification Level 2
    • Device CDM Classification Level C6
  • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration With Independent Inputs
  • Maximum Boot Voltage 120-V DC
  • 4-A Sink, 4-A Source Output Currents
  • 0.9-Ω Pullup and Pulldown Resistance
  • Input Pins Can Tolerate –10 V to +20 V and are Independent of Supply Voltage Range
  • TTL Compatible Inputs
  • 8-V to 17-V VDD Operating Range, (20-V ABS MAX)
  • 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF Load
  • Fast Propagation Delay Times (20-ns typical)
  • 4-ns Delay Matching
  • Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver
  • Available in the Industry Standard SO-PowerPAD SOIC-8 Package
  • Specified from –40 to +140°C
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade –40°C to +140°C Ambient Operating Temperature Range
    • Device HBM Classification Level 2
    • Device CDM Classification Level C6
  • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration With Independent Inputs
  • Maximum Boot Voltage 120-V DC
  • 4-A Sink, 4-A Source Output Currents
  • 0.9-Ω Pullup and Pulldown Resistance
  • Input Pins Can Tolerate –10 V to +20 V and are Independent of Supply Voltage Range
  • TTL Compatible Inputs
  • 8-V to 17-V VDD Operating Range, (20-V ABS MAX)
  • 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF Load
  • Fast Propagation Delay Times (20-ns typical)
  • 4-ns Delay Matching
  • Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver
  • Available in the Industry Standard SO-PowerPAD SOIC-8 Package
  • Specified from –40 to +140°C

The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 4-A source and 4-A sink, and pullup and pulldown resistance have been reduced to 0.9 Ω, and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20-V maximum rating.

The switching node of the UCC27211A-Q1 (HS pin) can handle –18-V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turn on and turn off of each other.

An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27211A-Q1 device is offered in an 8-Pin SO-PowerPAD package.

The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 4-A source and 4-A sink, and pullup and pulldown resistance have been reduced to 0.9 Ω, and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20-V maximum rating.

The switching node of the UCC27211A-Q1 (HS pin) can handle –18-V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turn on and turn off of each other.

An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27211A-Q1 device is offered in an 8-Pin SO-PowerPAD package.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC27211A-Q1 120-V Boot, 4-A Peak, High-Frequency High-Side and Low-Side Driver datasheet (Rev. A) PDF | HTML 07 Jan 2016
Functional safety information UCC27211A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 17 Mär 2022
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 30 Mär 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018

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