A charge pump is integrated to supply the gate drive voltage of a high-side NMOS (VGSH). The charge pump requires a capacitor between the VM and VCP pins. Additionally, a low-ESR ceramic capacitor is required between the CPH and CPL pins. When the VM voltage is below 13.5 V, this charge pump functions as a doubler and generates a VVCP equal to 2 × VVM – 1.5 V if unloaded. When the VM voltage is more than 13.5 V, the charge pump regulates VVCP such that it is equal to VVM + 10.5 V.