SBOSAM2 August 2025 INA701
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Table 7-4 shows the full scale voltage on shunt, bus, and temperature measurements, along with the associated step size.
| PARAMETER | REGISTER ADDRESS | SIZE | FULL SCALE VALUE | RESOLUTION |
|---|---|---|---|---|
| Current | 7h | 16 bit, signed | ±6.2259A | 190µA/LSB |
| Bus voltage | 5h | 16 bit, signed, always positive | 0V to 40V | 3.125mV/LSB |
| Die Temperature | 6h | 12 bit, signed | –40°C to +150°C | 125m°C/LSB |
| Power | 8h | 24 bit, unsigned | 0.63534kW | 38µW/LSB |
| Energy | 9h | 40 bit, unsigned | 668.5MJ | 0.608mJ/LSB |
| Charge | Ah | 40 bit, signed | 6.52835MC | 11.875µC/LSB |
The internal die temperature sensor range extends from –256°C to +256°C but is limited by the junction temperature range of –40°C to 125°C. Likewise, the bus voltage measurement range extends up to 102.4V but is limited by silicon to 40V.
Current, bus voltage, temperature, power, energy, and charge measurements can be read through the corresponding address registers. Values are calculated by multiplying the returned value by the corresponding LSB size.
Signed values are represented in two's compliment format.
Upon overflow, the ENERGY register rolls over and starts from zero. This register value can also be reset at any time by setting the RSTACC bit in the CONFIG register.
An overflow event in the CHARGE register is indicated by the CHARGEOF bit. If an overflow condition occurs, the CHARGE register must be manually reset by setting the RSTACC bit in the CONFIG register.
See Detailed Design Procedure for a design example using these equations.