SBOSAM2 August 2025 INA701
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The power dissipated in the device limits the maximum current that can be safely handled by the device. The current consumed to power the device is low, therefore the primary source of heating is due to the current flow through the internal shunt resistor. The maximum safe-operating current level shown in Figure 6-4 is set so that the heat generated in the package is limited and the internal junction temperature of the silicon does not exceed 125°C. This data is collected from an evaluation module that uses a 2-layer board with 1oz copper power planes to the INA701 IN+ and IN– pins.
The current measurement capability is limited by ADC full scale range of 6.225A, even though the shunt can withstand pulse currents greater than 6A.
In applications with overcurrent transients, the peak amplitude and duration of the overcurrent event is important to determine the device heating. Figure 6-5 shows the peak pulse current versus pulse duration that the device can withstand before the maximum junction temperature of 125°C is exceeded. The data shown in this curve is collected at TA = 25°C, using the INA701 evaluation module.