SBOS263H October   2002  – December 2024 OPA830

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configurations
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics for D Package VS = ±5V
    6. 6.6  Electrical Characteristics for D Package VS = 5V
    7. 6.7  Electrical Characteristics for D Package VS = 3V
    8. 6.8  Electrical Characteristics for DBV Package VS = ±5V
    9. 6.9  Electrical Characteristics for DBV Package VS = 5V
    10. 6.10 Electrical Characteristics for DBV Package VS = 3V
    11. 6.11 Typical Characteristics: VS = ±5V
    12. 6.12 Typical Characteristics: VS = ±5V, Differential Configuration
    13. 6.13 Typical Characteristics: VS = 5V
    14. 6.14 Typical Characteristics: VS = 5V, Differential Configuration
    15. 6.15 Typical Characteristics: VS = 3V
    16. 6.16 Typical Characteristics: VS = 3V, Differential Configuration
  8. Parameter Measurement Information
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Wideband Voltage-Feedback Operation
      2. 8.1.2  DC Level-Shifting
      3. 8.1.3  Optimizing Resistor Values
      4. 8.1.4  Bandwidth Versus Gain: Noninverting Operation
      5. 8.1.5  Inverting Amplifier Operation
      6. 8.1.6  Output Current and Voltages
      7. 8.1.7  Driving Capacitive Loads
      8. 8.1.8  Distortion Performance
      9. 8.1.9  Noise Performance
      10. 8.1.10 DC Accuracy and Offset Control
      11. 8.1.11 Thermal Analysis
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Supply ADC Interface
      2. 8.2.2 AC-Coupled Output Video Line Driver
      3. 8.2.3 Noninverting Amplifier With Reduced Peaking
      4. 8.2.4 Single-Supply Active Filter
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
        1. 8.3.1.1 Input and ESD Protection
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Demonstration Boards
        2. 9.1.1.2 Macromodel and Applications Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Inverting Amplifier Operation

All of the familiar op amp application circuits are available with the OPA830 to the designer. See Figure 8-5 for a typical inverting configuration where the I/O impedances and signal gain from Figure 8-1 are retained in an inverting circuit configuration. Inverting operation is one of the more common requirements and offers several performance benefits. Inverting operation also allows the input to be biased at VS/2 without any headroom issues. The output voltage can be independently moved to within the output voltage range with coupling capacitors or bias adjustment resistors.

OPA830 AC-Coupled, G = –2 Example
                    Circuit Figure 8-5 AC-Coupled, G = –2 Example Circuit

In the inverting configuration, be aware of three key design considerations. The first consideration is that the gain resistor (RG) becomes part of the signal channel input impedance. If input impedance matching is desired (which is beneficial whenever the signal is coupled through a cable, twisted pair, long PCB trace, or other transmission line conductor), RG can be set equal to the required termination value and RF adjusted to give the desired gain. This approach is the simplest and results in optimized bandwidth and noise performance.

However, at low inverting gains, the resulting feedback resistor value can present a significant load to the amplifier output. For an inverting gain of 2, setting RG to 50Ω for input matching eliminates the need for RM but requires a 100Ω feedback resistor. This configuration has the interesting advantage of the noise gain becoming equal to 2 for a 50Ω source impedance—the same as the noninverting circuits considered previously. The amplifier output now has the 100Ω feedback resistor in parallel with the external load. In general, limit the feedback resistor to the 200Ω to 1.5kΩ range. In this case, increase both the RF and RG values (see also Figure 8-5), and then achieve the input matching impedance with a third resistor (RM) to ground. The total input impedance becomes the parallel combination of RG and RM.

The second major consideration, mentioned briefly in the previous paragraph, is that the signal source impedance becomes part of the noise gain equation, and thus influences the bandwidth. For the example in Figure 8-5, the RM value combines in parallel with the external 50Ω source impedance (at high frequencies), yielding an effective driving impedance of 50Ω || 57.6Ω = 26.8Ω. This impedance is added in series with RG for calculating the noise gain. The resulting noise gain is 2.87 for Figure 8-5, as opposed to only 2 if RM is eliminated as discussed previously. Therefore, the bandwidth is lower for the gain of −2 circuit of Figure 8-5 (NG = +2.87) than for the gain of +2 circuit of Figure 8-1.

The third important consideration in inverting amplifier design is setting the bias current cancellation resistors on the noninverting input (a parallel combination of RT = 750Ω). If this resistor is set equal to the total dc resistance coming out of the inverting node, the output dc error, as a result of the input bias currents, is reduced to (input offset current) times RF. With the dc blocking capacitor in series with RG, the dc source impedance coming out of the inverting mode is simply RF = 750Ω for Figure 8-5. To reduce the additional high-frequency noise introduced by this resistor and power-supply feed-through, bypass RT with a capacitor.