SBOS263H October 2002 – December 2024 OPA830
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The OPA830 is built using a very high-speed complementary bipolar process. The internal junction breakdown voltages are relatively low for these very small geometry devices. These breakdowns are reflected in the Absolute Maximum Ratings. All device pins are protected with internal ESD protection diodes to the power supplies, as in Figure 8-11.
Figure 8-11 Internal ESD
ProtectionThese diodes provide moderate protection to input overdrive voltages greater than the supplies as well. The protection diodes can typically support 30mA continuous current. Where higher currents are possible (that is, in systems with ±15V supply parts driving into the OPA830), add current-limiting series resistors into the two inputs. Keep these resistor values as low as possible because high values degrade both noise performance and frequency response.