SCES983 October   2025 TXB0604

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics, VCCA = 0.9V
    6. 5.6 Switching Characteristics, VCCA = 1.2V
    7. 5.7 Switching Characteristics, VCCA = 1.5V ± 0.1V
    8. 5.8 Switching Characteristics, VCCA = 1.8V ± 0.15V
    9. 5.9 Switching Characteristics: Tsk, TMAX (-40°C to 125°C) 
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Architecture
      2. 7.3.2 Input Driver Requirements
      3. 7.3.3 Output Load Considerations
      4. 7.3.4 Enable and Disable
      5. 7.3.5 Pullup or Pulldown Resistors on I/O Lines
      6. 7.3.6 Dummy Cycles
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

7.3.1 Architecture

The TXB0604 device architecture (see Figure 7-1) does not require a direction-control signal to control the direction of data flow from A to B or from B to A. In a DC state, the output drivers of the device maintain a high or low, but are designed to be weak, so the output drivers can be overdriven by an external driver when data on the bus flows the opposite direction.

The output one-shots detect rising or falling edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly, during a falling edge, the one-shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up the high-to-low transition. The typical output impedance during output transition is approximately 28Ω at VCCO = 1.8V, approximately 22Ω at VCCO = 2.5V, and 21Ω at VCCO = 3.3V.

TXB0604 Architecture of TXB0604 Device I/O Cell Figure 7-1 Architecture of TXB0604 Device I/O Cell