SLASEE9C September   2017  – May 2025 TPA3221

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Audio Characteristics (BTL)
    7. 6.7 Audio Characteristics (PBTL)
    8.     Typical Characteristics, BTL Configuration, AD-mode
    9.     Typical Characteristics, PBTL Configuration, AD-mode
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Internal LDO
        1. 8.3.1.1 Input Configuration, Gain Setting And Controller/Peripheral Operation
      2. 8.3.2 Gain Setting And Controller / Peripheral Operation
      3. 8.3.3 AD-Mode and HEAD-Mode PWM Modulation
      4. 8.3.4 Oscillator
      5. 8.3.5 Input Impedance
      6. 8.3.6 Error Reporting
    4. 8.4 Device Functional Modes
      1. 8.4.1 Powering Up
        1. 8.4.1.1 Startup Ramp Time
      2. 8.4.2 Powering Down
        1. 8.4.2.1 Power Down Ramp Time
      3. 8.4.3 Device Reset
      4. 8.4.4 Device Soft Mute
      5. 8.4.5 Device Protection System
        1. 8.4.5.1 Overload and Short Circuit Current Protection
        2. 8.4.5.2 Signal Clipping and Pulse Injector
        3. 8.4.5.3 DC Speaker Protection
        4. 8.4.5.4 Pin-to-Pin Short Circuit Protection (PPSC)
        5. 8.4.5.5 Overtemperature Protection OTW and OTE
        6. 8.4.5.6 Undervoltage Protection (UVP) and Power-on Reset (POR)
        7. 8.4.5.7 Fault Handling
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Stereo BTL Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedures
          1. 9.2.1.2.1 Decoupling Capacitor Recommendations
          2. 9.2.1.2.2 PVDD Capacitor Recommendation
          3. 9.2.1.2.3 BST capacitors
          4. 9.2.1.2.4 PCB Material Recommendation
      2. 9.2.2 Typical Application, Differential (2N), AD-Mode PBTL (Outputs Paralleled before LC filter)
        1. 9.2.2.1 Design Requirements
      3. 9.2.3 Typical Application, Differential (2N), AD-Mode PBTL (Outputs Paralleled after LC filter)
        1. 9.2.3.1 Design Requirements
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Power Supplies
        1. 9.3.1.1 VDD Supply
        2. 9.3.1.2 AVDD and GVDD Supplies
        3. 9.3.1.3 PVDD Supply
        4. 9.3.1.4 BST Supply
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 BTL Application Printed Circuit Board Layout Example
        2. 9.4.2.2 PBTL (Outputs Paralleled before LC filter) Application Printed Circuit Board Layout Example
        3. 9.4.2.3 PBTL (Outputs Paralleled after LC filter) Application Printed Circuit Board Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

11 Revision History

Changes from Revision B (January 2018) to Revision C (May 2025)

  • Removed Overvoltage from the FeaturesGo
  • Removed Overvoltage from the DescriptionGo
  • Removed OVP protectionGo
  • Removed OVP protectionGo
  • Removed OVP protectionGo

Changes from Revision A (November 2017) to Revision B (January 2018)

  • Added pins OSCM, OSCP to the Interface pins in the Absolute Maximun Ratings tableGo
  • Changed the TJ MIN value From: 0°C To –40°C in the Absolute Maximun Ratings tableGo
  • Deleted TJ Junction Temperature from the Recommended Operating Conditions tableGo
  • Changed the capacitor on IN1_P, IN2_P and IN1_M, IN2_M From: 10µF To: 1µF in Figure 9-1 Go
  • Changed the capacitor on IN1_P and IN1_M From: 10µF To: 1µF in Figure 9-2 Go
  • Changed the capacitor on IN1_P and IN1_M From: 10µF To: 1µF in Figure 9-3 Go

Changes from Revision * (September 2017) to Revision A (November 2017)

  • Changed From: Advanced Information To: Production DataGo