11 Revision History
Changes from November 1, 2024 to April 30, 2025 (from Revision * (November 2024) to Revision A (April 2025))
- Added note to indicate that this device is targeting PSA-L1 certificationGo
- Updated Features description for quantity of timers available in low-power operation to four in standby mode for accuracyGo
- Updated Features description for quantity of UART instances available in low-power operation to three in standby mode for accuracyGo
- Updated quantity of SPI instances which can support up to 32Mbit/s to one for accuracyGo
- Clarified descriptions for each SRAM Bank0 and Bank1 availability for operating modesGo
- Added device variants for 100_nFBGA_ZAW package as PreviewGo
- Added device variants for 42_DSBGA_YCJ package as PreviewGo
- Updated device variants for 100_nFBGA_ZAW package as
releasedGo
- Updated device comparison table to indicate 2x ADCs are present in all device variantsGo
- Updated device comparison table to outline quantity of UART/I2C/SPI in each device variant Go
- Updated Device Comparison table to add MSPM0G1518SPM (tray-pack) variantGo
- Updated Device Comparison table to
add MSPM0G1518SPM (tray-pack)
variantGo
- Updated Absolute Maximum Ratings for I_VDD and I_VSS to reflect
correct junction temperatures and also remove VDD>=2.7V
conditionGo
- Added footnote to I_VDD and I_VSS guidelines for reduced current
consumption when VDD supply voltage is low (e.g. 1.62V)Go
- Added ambient temperature rating to Absolute Maximum
RatingsGo
- Added ambient and junction temperature specifications to Recommended
Operating ConditionsGo
- Updated Thermal Information section with accurate specification
values per package variantGo
- Updated Supply Current Characteristics to include maximum values and
accurate typical valuesGo
- Added Supply Current Characteristics parameter for per-MHz SLEEP
current (assessed at 80MHz)Go
- Changed POR and BOR specifications to reflect accurate voltage
thresholds for POR and coldboot BORGo
- Changed Flash Memory Characteristics to allow for users to designate
any 32kB sectors of flash memory to apply 100k cycles, rather than only the
lower 32kB sectorsGo
- Updated Timing Characteristics section with accurate specificaiton
values and added wakeup time from SLEEP0 to runGo
- Updated System Oscillator specifications with accurate values Go
- Removed SYSOSC Typical Frequency Accuracy Figure Go
- Updated test condition for SYSPLL start-up time to indicate PDIV and
QDIV configurationGo
- Updated Digital IO electrical characteristics to reflect correct
ambient temperature conditionsGo
- Added rise/fall time specifications to Digital IO switching
characteristics Go
- Added f_max specifications for HDIO DRV=1 condition in Digital IO
switching characteristicsGo
- Changed ADC electrical characteristics for ENOB and SNR to improve
specifications and indicate f_in frequency as test conditionGo
- Changed ADC specifications for Offset error from +/- 2mV to +/-
3.5mVGo
- Changed ADC specifications for Gain error from +/- 3LSB to +/- 4LSB Go
- Updated Temperature Sensor conditions to reflect correct VREF
configuration and settling timeGo
- Updated Temperature Sensor coefficient specification values Go
- Changed VREF electrical characteristics for IVREF and TCVREF
specification valuesGo
- Changed Comparator electrical characteristics for Icomp Go
- Updated SPI specifications to reflect corrected values Go
- Updated Supported Functionality by Operating Mode table for accuracy
and organizationGo
- Added detailed DMA Features table to DMA section Go
- Updated Flash Memory section to indicate that any 32kB sectors can be
selected for high-endurance operation Go
- Removed text from SRAM section
regarding usage of DMA with SRAM ECC
protectionGo
- Updated description in SRAM section regarding write-execute user
operationGo
- Updated ADC description section to reflect correct quantity of result storage registersGo
- Updated Temperature Sensor section to reflect correct test
conditions for settling time and VREF configurationGo
- Updated Security section to list all security features present in this
device Go
- Updated Keystore section to indicate that up to 4 keys are
supportedGo
- Updated UART section to correctly list UART instances present in
this device Go
- Updated SPI section to reference MCLK rather than ULPCLKGo
- Updated LFSS section to indicate presence of LFSS_B and RTC_B
variantsGo
- Added Cross Trigger Map to Timers
sectionGo
Changes from April 30, 2025 to October 30, 2025 (from Revision A (April 2025) to Revision B (Oct 2025))
- Updated device variants for 100_nFBGA_ZAW package as
releasedGo
- Updated Device Comparison table to add MSPM0G1518SPM (tray-pack) variantGo
- Updated Device Comparison table to
add MSPM0G1518SPM (tray-pack)
variantGo
- Added MSPM0G1518 in tray format to tableGo
- Added YCJ pin mapGo
- Added ZAW package thermal characteristicsGo
- Removed slew rate foot note with internal test condition from POR
and BOR table Go
- Added footnotes 5 and 6 to clarify test conditions, enabling users
to reproduce test caseGo
- Added footnote 3 for SYSPLL table to give performance
recommendationGo
- Added YCJ (WCSP) and ZAW (nfBGA) package drawingsGo