SLUSFF2C September   2023  – December 2025 UCG28824 , UCG28826 , UCG28828

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Descriptions
      1. 7.3.1  HV - High Voltage Input
      2. 7.3.2  SW - Switch Node
      3. 7.3.3  GND – Ground Return
      4. 7.3.4  FLT - External Overtemperature Fault
      5. 7.3.5  FB ­­– Feedback
      6. 7.3.6  TR - Turns Ratio
      7. 7.3.7  IPK - Peak Current and Dithering
      8. 7.3.8  FCL - Frequency Clamp and Fault Response
      9. 7.3.9  CDX - CCM, Drive Strength, and X-cap Discharge
      10. 7.3.10 VCC - Input Bias
    4. 7.4 Feature Description
      1. 7.4.1  Self Bias and Auxless Sensing
      2. 7.4.2  Control Law
        1. 7.4.2.1 Valley Switching
        2. 7.4.2.2 Frequency Foldback
        3. 7.4.2.3 Burst Mode
        4. 7.4.2.4 Continuous Conduction Mode (CCM)
      3. 7.4.3  GaN HEMT Switching Capability
      4. 7.4.4  Soft Start
      5. 7.4.5  Frequency Clamp
      6. 7.4.6  Frequency Dithering
      7. 7.4.7  Slew Rate Control
      8. 7.4.8  Transient Peak Power Capability
      9. 7.4.9  X-Cap Discharge
      10. 7.4.10 Fault Protections
        1. 7.4.10.1 Brownout Protection
        2. 7.4.10.2 Short-Circuit Protection
        3. 7.4.10.3 Output Overvoltage Protection
        4. 7.4.10.4 Overpower Protection (OPP, LPS)
        5. 7.4.10.5 Overtemperature Protection
        6. 7.4.10.6 Open FB Protection
        7. 7.4.10.7 Error Codes for Protections
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitor
        2. 8.2.2.2 Transformer Primary Inductance and Turns Ratio
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Selection Resistors
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VHV(surge) GaN HEMT drain-source voltage, surge condition 800 V
VSW(tr)(surge) GaN power HEMT transient drain-source voltage, surge condition(2)(4) 800 V
VSW(tr) GaN power HEMT drain-source transient voltage, each switching cycle(3)(4) 750 V
VSW GaN power HEMT continuous drain-source voltage, FET off 700 V
IDS GaN power HEMT continuous current, FET on Internally limited A
Pin voltage FLT, TR, IPK, FCL, CDX, FB –0.3 5.5 V
VCC –0.3 6.5
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) One time event with duration limited to <100µs
(3) Damped to VSW(Plateau)=600V in <900ns
(4) See GaN HEMT Switching Capability for more information on the GaN power FET switching capability.