SLVAFY3 January 2025 DRV8376 , DRV8376-Q1
The device integrates six N-channel MOSFETs with integrated gate driver. The high side gate driver uses charge-pump based power supply with one integrated capacitor, that need only one external capacitor. The integrated shunt less current sense, LDOs, and multi-level protection eliminates the need of external components. All integration available in a 6x4mm package. Table 4-1 lists the integration in DRV8376 compared to a discrete approach illustrating the saving of more than 40 external components.
| Integration in DRV8376 | Number of components in a discrete implementation |
|---|---|
| Six N-channel MOSFETs | Six N-channel discrete MOSFETs |
| 3-phase gate driver with integrated gate current control options | One 3-phase gate driver, 12 resistors (six gate resistors & six gate-source resistors) |
| One integrated charge pump capacitor and one external capacitor | Two external capacitors |
| Three shunt-less current sense | 3-shunt resistors, 3 current sense amplifiers and more than 12 resistors for gain configuration |
| 3.3V and 5V LDO | 1 or 2 external LDO |
| Multilevel protection | Multiple passive components and comparators |