SLVSDR8B April   2018  – February 2023 TPS62147 , TPS62148

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Schematic
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Precise Enable
      2. 9.3.2 Power Good (PG)
      3. 9.3.3 MODE
      4. 9.3.4 Undervoltage Lockout (UVLO)
      5. 9.3.5 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 Pulse Width Modulation (PWM) Operation
      2. 9.4.2 Power Save Mode Operation (PWM/PFM)
      3. 9.4.3 100% Duty-Cycle Operation
      4. 9.4.4 Current Limit And Short Circuit Protection (for TPS62148)
      5. 9.4.5 HICCUP Current Limit And Short Circuit Protection (for TPS62147)
      6. 9.4.6 Soft Start / Tracking (SS/TR)
      7. 9.4.7 Output Discharge Function (TPS62148 only)
      8. 9.4.8 Starting into a Pre-Biased Load
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Programming the Output Voltage
      2. 10.1.2 External Component Selection
      3. 10.1.3 Inductor Selection
      4. 10.1.4 Capacitor Selection
        1. 10.1.4.1 Output Capacitor
        2. 10.1.4.2 Input Capacitor
        3. 10.1.4.3 Soft-Start Capacitor
      5. 10.1.5 Tracking Function
      6. 10.1.6 Output Filter and Loop Stability
    2. 10.2 Typical Applications
      1. 10.2.1 Typical Application with Adjustable Output Voltage
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 LED Power Supply
      2. 10.3.2 Powering Multiple Loads
      3. 10.3.3 Voltage Tracking
      4. 10.3.4 Precise Soft-Start Timing
    4. 10.4 Power Supply Recommendations
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
      2. 10.5.2 Layout Example
      3. 10.5.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

7.5 Electrical Characteristics

TJ = –40 °C to +125 °C and VIN = 3 V to 17 V. Typical values at VIN = 12 V and TA = 25 °C, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY
IQOperating Quiescent CurrentEN = high, IOUT= 0 mA, Device not switching, TJ= 85 °C35µA
IQOperating Quiescent CurrentEN = high, IOUT= 0 mA, Device not switching1846µA
ISDShutdown CurrentEN = 0 V, Nominal value at TJ= 25 °C, Max value at TJ= 85 °C18µA
VUVLOUndervoltage Lockout ThresholdRising Input Voltage2.82.93.0V
Falling Input Voltage2.52.62.7V
TSDThermal Shutdown TemperatureRising Junction Temperature160°C
Thermal Shutdown Hysteresis20
CONTROL (EN, SS/TR, PG, MODE, FSEL)
VIHHigh Level Input Voltage for FSEL, MODE pin0.9V
VILLow Level Input Voltage for FSEL, MODE pin0.3V
VIHInput Threshold Voltage for EN pin; rising edge0.770.80.83V
VILInput Threshold Voltage for EN pin; falling edge0.670.70.73V
ILKG_ENInput Leakage Current for EN, FSEL, MODEVIH = VIN or VIL= GND100nA
VTH_PGPower Good Threshold Voltage; dc levelRising (%VOUT)93%96%98%
HysteresisFalling (%VOUT)3%4.5%
VOL_PGPower Good Output Low VoltageIPG = -2 mA0.070.3V
ILKG_PGInput Leakage Current (PG)VPG = 5 V100nA
ISS/TRSS/TR pin source current2.5µA
ISS/TR toleranceTJ= –40 °C to +125 °C±0.2µA
Tracking gainVFB / VSS/TR1
Tracking offsetfeedback voltage with VSS/TR = 0 V11mV
POWER SWITCH
RDS(ON)High-Side MOSFET ON-ResistanceVIN ≥ 4 V100180mΩ
Low-Side MOSFET ON-ResistanceVIN ≥ 4 V3967mΩ
ILIMHHigh-Side MOSFET Current Limitdc value(2)2.83.54.2A
ILIMLLow-Side MOSFET Current Limitdc value(2)2.83.54.2A
ILIMNEGNegative current limit; average valuedc value1.5A
OUTPUT
VFBFeedback Voltage0.7V
ILKG_FBInput Leakage Current (FB)VFB= 0.7 V170nA
VFBFeedback Voltage Accuracy(1)VIN ≥ VOUT +1 VPWM mode-1%1%
VIN ≥ VOUT +1 V; VOUT ≥ 1.5 VPFM mode; Co,eff ≥ 47 µF, L = 1 µH for FSEL = high, L = 1.5 µH for FSEL = low-1%2%
1 V ≤ VOUT < 1.5 VPFM mode; Co,eff ≥ 47 µF, L = 1 µH for FSEL = high, Co,eff ≥ 60 µF, L = 1.5 µH for FSEL = low-1%2.5%
VOUT < 1 VPFM mode; Co,eff ≥ 75 µF, L = 1 µH for FSEL = high, L = 1.5 µH for FSEL = low-1%2.5%
VFBFeedback Voltage Accuracy with Voltage TrackingVIN ≥ VOUT +1 V; VSS/TR = 0.35 VPWM mode-2%7.5%
Load RegulationPWM mode operation0.05%/A
Line RegulationPWM mode operation, IOUT= 1 A, VIN ≥ Vout + 1 V or VIN ≥ 3.5 V whichever is larger0.02%/V
Output Discharge Resistance100Ω
tdelayStart-up Delay timeIO= 0 mA, Time from EN=high to start switching; VIN applied already200300µs
trampRamp time; SS/TR pin openIO= 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit150µs
(1) The output voltage accuracy in Power Save Mode can be improved by increasing the output capacitor value, reducing the output voltage ripple (see Pulse Width Modulation (PWM) Operation).
(2) See also Section 9.4.5.