SLVSGS5A December   2023  – June 2024 DRV3946-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 SPI Timing Requirements
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Recommended External Components
      2. 6.3.2  Power Supplies and Monitors
        1. 6.3.2.1 PVDD and VDD Power Supplies
        2. 6.3.2.2 PVDD Monitor
        3. 6.3.2.3 VDD Monitor
        4. 6.3.2.4 RESET (nPOR)
        5. 6.3.2.5 Device Safety Layer
      3. 6.3.3  Output Driver
        1. 6.3.3.1 Retry Wait
        2. 6.3.3.2 Over Current Protection
        3. 6.3.3.3 Thermal Protection
      4. 6.3.4  Start-up Sequencing
      5. 6.3.5  Current Control
        1. 6.3.5.1 Internal Regulation Mode
          1. 6.3.5.1.1 Current Thresholds
          2. 6.3.5.1.2 PWM Cycle Control
        2. 6.3.5.2 Fixed Frequency, Variable Duty Cycle Mode
        3. 6.3.5.3 Fixed Duty Cycle, Variable Frequency Mode
        4. 6.3.5.4 Quick Turn Off
        5. 6.3.5.5 PWM Frequency
        6. 6.3.5.6 Minimum and Maximum Duty Cycle
      6. 6.3.6  EN/EN1 and DIS/EN2 pins
      7. 6.3.7  Diagnostics Features
        1. 6.3.7.1 On State Diagnostics
          1. 6.3.7.1.1 PWM Cycle Warnings
          2. 6.3.7.1.2 Timer Based Warnings
        2. 6.3.7.2 Off-state Diagnostics
      8. 6.3.8  nFAULT/NAD Pin
      9. 6.3.9  Fault Table
      10. 6.3.10 Programming
        1. 6.3.10.1 SPI Interface
        2. 6.3.10.2 Addressable SPI
        3. 6.3.10.3 SPI Error Indicators
        4. 6.3.10.4 SPI Format
        5. 6.3.10.5 SPI Watchdog Monitor
  8. 7 Register Maps
    1. 7.1 STATUS Registers
      1. 7.1.1 STATUS0 Register (Address = 1h) [Reset = 2500h]
      2. 7.1.2 STATUS1 Register (Address = 2h) [Reset = 0803h]
      3. 7.1.3 STATUS2 Register (Address = 3h) [Reset = 0000h]
      4. 7.1.4 STATUS3 Register (Address = 4h) [Reset = 0000h]
      5. 7.1.5 STATUS4 Register (Address = Ah) [Reset = 0000h]
      6. 7.1.6 STATUS5 Register (Address = Bh) [Reset = 0000h]
    2. 7.2 MEAS Registers
      1. 7.2.1 MEAS0 Register (Address = 5h) [Reset = 0000h]
      2. 7.2.2 MEAS1 Register (Address = 6h) [Reset = 0000h]
      3. 7.2.3 MEAS2 Register (Address = 7h) [Reset = 0000h]
      4. 7.2.4 MEAS3 Register (Address = 8h) [Reset = 0000h]
      5. 7.2.5 MEAS4 Register (Address = 9h) [Reset = 0000h]
      6. 7.2.6 MEAS5 Register (Address = Ch) [Reset = 0000h]
      7. 7.2.7 MEAS6 Register (Address = Dh) [Reset = 0000h]
    3. 7.3 CONFIG A Registers
      1. 7.3.1 CONFIG_A0 Register (Address = 10h) [Reset = C040h]
      2. 7.3.2 CONFIG_A1 Register (Address = 11h) [Reset = C040h]
      3. 7.3.3 CONFIG_A2 Register (Address = 12h) [Reset = 2424h]
      4. 7.3.4 CONFIG_A3 Register (Address = 13h) [Reset = 0088h]
      5. 7.3.5 CONFIG_A4 Register (Address = 14h) [Reset = 130Ch]
      6. 7.3.6 CONFIG_A5 Register (Address = 15h) [Reset = 8000h]
      7. 7.3.7 CONFIG_A6 Register (Address = 16h) [Reset = 0000h]
    4. 7.4 CONFIG B Registers
      1. 7.4.1 CONFIG_B0 Register (Address = 17h) [Reset = 2623h]
      2. 7.4.2 CONFIG_B1 Register (Address = 18h) [Reset = 0040h]
      3. 7.4.3 CONFIG_B2 Register (Address = 19h) [Reset = 0B0Bh]
      4. 7.4.4 CONFIG_B3 Register (Address = 1Ah) [Reset = 8000h]
      5. 7.4.5 CONFIG_B4 Register (Address = 1Bh) [Reset = 0000h]
    5. 7.5 CMD Registers
      1. 7.5.1 CMD0 Register (Address = 1Ch) [Reset = 8000h]
      2. 7.5.2 CMD1 Register (Address = 1Dh) [Reset = 0000h]
      3. 7.5.3 CMD2 Register (Address = 1Eh) [Reset = 0000h]
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Transient Thermal Impedance and Current Capability
      3. 8.2.3 Application Performance Plots
      4. 8.2.4 PVDD Capacitance Value Estimation
    3. 8.3 Initialization Setup
      1. 8.3.1 Device Initialization – NAD
      2. 8.3.2 Device Initialization – Configuration
      3. 8.3.3 System Initialization
        1. 8.3.3.1 EN/EN1 and DIS/EN2 Function Check
        2. 8.3.3.2 nFAULT Signalling Check
        3. 8.3.3.3 Device Timing Check
        4. 8.3.3.4 Secondary Logic Check
      4. 8.3.4 Turn On Relay
      5. 8.3.5 Turn Off Relay
        1. 8.3.5.1 Using Target Device Command
        2. 8.3.5.2 Using Broadcast Command
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 PVDD Supply Requirements
      2. 8.4.2 PVDD Undervoltage Transients - Contactor Chatter or Weld Prevention
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

8.2.2 Transient Thermal Impedance and Current Capability

The following table summarizes the transient thermal resistance (Junction-to-ambient) for a sample 4 layer, 4cm x 4cm x 1.6mm PCB design with no additional heat sinking. The 4 layers uses 2oz copper on top and bottom signal layers and 1 oz copper on internal supply layers, with 0.3mm thermal via drill diameter, 0.025mm Cu plating and 1mm via pitch.

Table 8-2 Transient Thermal Resistance

RθJA at 0.1 s (°C/W)

RθJA at 1 s (°C/W)

RθJA at 10 s (°C/W)

RθJA at DC (°C/W)

3.3

7.2

12.2

29.0

The transient current carrying capability per channel (assuming both channels are operating simultaneously) is summarized below, based on ambient temperature of 85 deg C (thermal GND). It is assumed that the waiting time between two successive QTO events is large, so that there is no residual temperature rise due to a previous QTO event. Switching losses have been estimated at PVDD = 13.5 V, PWM frequency = 20 kHz, Duty Cycle = 25% and Slew Rate = 12.6 V/µsec, using an approximation of PVDD x I x PVDD / SR x fPWM.

Table 8-3 Transient Current Carrying Capability

I at 0.1 sec (A)

I at 1 sec (A)

I at 10 sec (A)

I at DC (A)

8.03

5.08

3.67

2.07

Note:

  • Switching losses will limit the hold current at slower slew rates and higher PWM frequencies

  • Peak current regulation is optional and can be disabled to avoid switching at higher currents that could cause thermal challenges

The following formula explains in detail the above example at DC or steady state condition:

At 85 deg C thermal ground, junction temperature rise budget = 65 deg C, to restrict junction temperature below 150 deg C.

Power Dissipation per channel on LS FET during charge

= I2 x LS RONmax x DutyCycle

= 2.07 2 x 75 mohm x 25%

= 80.3 mW

Power Dissipation per channel on HS FET during recirc

= I2 x RECIRC RONmax x (1-DutyCycle)

= 2.07 2 x 120 mohm x 75%

= 385.6 mW

Power Dissipation per channel on LS FET during PWM switching

= PVDD x I x PVDD/SlewRate x fPWM

= 13.5 V x 2.07 x 13.5 V/ (12.6 V/µsec) x 20 kHz

= 598.8 mW

Total power dissipation per channel = 1064.7 mW

Switching loss / Total = 598.8 mW/ 1064.7 mW = 56%

Total power dissipation for both channels = 2 x 1064.7 mW = 2129.4 mW

At 29 deg C/W, this translate to junction heating of (29 deg C/W x 2.129 W) = 62 deg C.